Electrical Properties of CuIn3Se5 Bulk Crystal at Low Temperature

CuIn3Se5 crystals were grown from the melt containing stoichiometric quantities of the elements of at least 5 N purity. The structure was analyzed by X‐ray powder diffraction, and shows mainly a tetragonal single phase. The chemical composition was determined by EDAX and Total X‐Ray Fluorescence (TX...

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Veröffentlicht in:	Crystal research and technology (1979) 2002-10, Vol.37 (10), p.1088-1093
Hauptverfasser:	HERNANDEZ, E, LOPEZ PESCADOR, A, DURANTE RINCON, C. A, LEON, M
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators CuIn3Se5 electrical properties Electronic transport in condensed matter Exact sciences and technology Galvanomagnetic and other magnetotransport effects OVC Physics ternary semiconductor
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Beschreibung
Zusammenfassung:	CuIn3Se5 crystals were grown from the melt containing stoichiometric quantities of the elements of at least 5 N purity. The structure was analyzed by X‐ray powder diffraction, and shows mainly a tetragonal single phase. The chemical composition was determined by EDAX and Total X‐Ray Fluorescence (TXRF). The conductivity and the Hall effect have been measured in the temperature range from 10 to 300 K. The polar optical scattering was found to dominate at low temperatures, while in the high temperature region ionized impurity scattering mechanism was observed.
ISSN:	0232-1300 1521-4079
DOI:	10.1002/1521-4079(200210)37:10<1088::AID-CRAT1088>3.0.CO;2-D