Geometry-Dependent Quality Factors in Ba(0.5)Sr(0.5)TiO(3) Parallel-Plate Capacitors

Geometry-Dependent Quality Factors in Ba(0.5)Sr(0.5)TiO(3) Parallel-Plate Capacitors

Quality factor variation with top electrode area in thin-film barium-strontium-titanate parallel-plate capacitors is discussed. At low frequencies, the geometry dependence is consistent with the presence of a parallel parasitic loss pathway enabled by conduction over the device mesa surface. At high...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 2007-02, Vol.55 (2), p.410-417
Hauptverfasser: Pervez, N K, York, R A
Format: Artikel
Sprache:eng
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Zusammenfassung:Quality factor variation with top electrode area in thin-film barium-strontium-titanate parallel-plate capacitors is discussed. At low frequencies, the geometry dependence is consistent with the presence of a parallel parasitic loss pathway enabled by conduction over the device mesa surface. At high frequencies, the variation in the quality factor with top electrode area is due to a geometry-independent series resistance.
ISSN:0018-9480
DOI:10.1109/TMTT.2006.889347