Dual-Band LC VCO Architecture With a Fourth-Order Resonator

Dual-Band LC VCO Architecture With a Fourth-Order Resonator

A dual-band LC voltage-controlled oscillator (VCO) architecture suitable for GSM/PCS/DCS applications is presented. The VCO utilizes a fourth-order resonance tank and avoids quality-factor-deteriorating switches. The paper outlines the design tradeoffs and the VCO when using a fourth-order resonator...

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Veröffentlicht in:IEEE transactions on circuits and systems. 2, Analog and digital signal processing Analog and digital signal processing, 2007-03, Vol.54 (3), p.277-281
Hauptverfasser: Tchamov, N.T., Broussev, S.S., Uzunov, I.S., Rantala, K.K.
Format: Artikel
Sprache:eng
Schlagworte:
Architecture
Bands
Circuits
Distributed control
Dual band
Dual-band voltage-controlled oscillator (VCO)
Germanium silicon alloys
GSM
multiband VCO
Personal communication networks
Resonance
Resonators
root locus
Silicon germanides
Silicon germanium
Switches
Tanks
Testing
Tuning
Voltage-controlled oscillators
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Zusammenfassung:A dual-band LC voltage-controlled oscillator (VCO) architecture suitable for GSM/PCS/DCS applications is presented. The VCO utilizes a fourth-order resonance tank and avoids quality-factor-deteriorating switches. The paper outlines the design tradeoffs and the VCO when using a fourth-order resonator. The 0.8-GHz/1.8-GHz test chip was fabricated in the 0.5-mum IBM-5AM SiGe process and has achieved phase noise of -134 dBc/Hz at a 1-MHz frequency offset from the carrier, with 56-MHz and 121-MHz tuning ranges in the corresponding bands. The VCO core consumes 15 mW from a 2.5-V power supply
ISSN:1549-7747
1057-7130
1558-3791
DOI:10.1109/TCSII.2006.888732