Tri-Band Bandpass Filter With Sharp Passband Skirts Designed Using Tri-Section SIRs

This letter presents a second-order tri-band bandpass filter (BPF) designed using tri-section stepped-impedance resonators (TSSIRs). The impedance ratios of the TSSIRs were computed using the formulas expressed as functions of the passband center frequencies, which are located at 1.57, 2.45, and 3.5...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2008-01, Vol.18 (1), p.19-21
Hauptverfasser:	Hsu, C.-I.G., Ching-Her Lee, Yi-Huan Hsieh
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Band pass filters Bandpass filters Circuit properties Circuit simulation Computational modeling Computer simulation Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Frequency filters Global Positioning System Impedance Mathematical analysis Mathematical models Microstrip filters Microstrip resonators Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves Oscillators, resonators, synthetizers Passband Resonant frequency Resonators Skirts Transceivers Tri-band microstrip bandpass filter (BPF) tri-section stepped-impedance resonator (TSSIR)
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Beschreibung
Zusammenfassung:	This letter presents a second-order tri-band bandpass filter (BPF) designed using tri-section stepped-impedance resonators (TSSIRs). The impedance ratios of the TSSIRs were computed using the formulas expressed as functions of the passband center frequencies, which are located at 1.57, 2.45, and 3.5 GHz. A cross-coupled configuration was arranged to sharpen the passband skirts. The newly designed tri-band BPF was verified by circuit implementation and very good agreement between the simulated and measured results was observed.
ISSN:	1531-1309 2771-957X 1558-1764 2771-9588
DOI:	10.1109/LMWC.2007.911976