The Effects of Hydrogen in Hermetically Sealed Packages on the Total Dose and Dose Rate Response of Bipolar Linear Circuits

The Effects of Hydrogen in Hermetically Sealed Packages on the Total Dose and Dose Rate Response of Bipolar Linear Circuits

It is demonstrated with test transistors and circuits that a small amount of hydrogen trapped in hermetically sealed packages can significantly degrade the total dose and dose rate response of bipolar linear microelectronics. In addition, we show that when exposed to an atmosphere of 100% molecular...

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Veröffentlicht in:IEEE transactions on nuclear science 2007-12, Vol.54 (6), p.2168-2173
Hauptverfasser: Pease, R.L., Platteter, D.G., Dunham, G.W., Seiler, J.E., Adell, P.C., Barnaby, H.J., Jie Chen
Format: Artikel
Sprache:eng
Schlagworte:
Atmosphere
Bipolar transistor circuits
Circuit testing
Circuits
Degradation
Deposition
Dies
Dosage
Dose rate
enhanced low-dose-rate sensitivity
Hermetic seals
Hydrogen
interface traps
Linear circuits
Microelectronics
Oxides
Packages
Packaging
radiation effects
Silicon
Silicon carbide
Silicon nitride
temperature transducer
total ionizing dose
voltage comparator
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Zusammenfassung:It is demonstrated with test transistors and circuits that a small amount of hydrogen trapped in hermetically sealed packages can significantly degrade the total dose and dose rate response of bipolar linear microelectronics. In addition, we show that when exposed to an atmosphere of 100% molecular hydrogen dies with silicon nitride passivation are unaffected, whereas dies with silicon carbide or deposited oxides become very soft at high and low dose rate.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2007.907870