Three-dimensional modeling of the tunneling potential in MOS memories embedded with metal nanoparticles

This paper undertakes a three-dimensional (3D) analysis of the electrostatic fields developed in non volatile SiO 2/HfO 2 memories (NVM) with metallic nanoparticles (m-NPs) embedded in the interface. Such a 3D approach is necessary in the case of m-NPs in contrast to the usual NVM based on Si NPs where a 1D analysis provides sufficient accuracy. The tunneling processes are then analyzed within this framework. It is concluded that the 3D potential will affect substantially the erase process at all voltages but in the charging process it will do so only at low voltages.