Self-Assembled InSb/InAs Quantum Dots for the Mid-Infrared Spectral Range 3-4 pm

Self-Assembled InSb/InAs Quantum Dots for the Mid-Infrared Spectral Range 3-4 pm

We report the results on structural and optical properties of the InSb quantum dots (QDs) grown on InAs(100) substrate by liquid-phase epitaxy (LPE). The uniform self-assembled QDs with high density (0.7-1.9x1010 cm-2) with dimensions of 3-5 nm in height and 11-13 nm in diameter were obtained in the...

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Veröffentlicht in:Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference (Springer Proceedings in Physics Series Volume 119) 2008-04, Vol.119, p.125-128
Hauptverfasser: Moiseev, K D, Parkhomenko, Ya A, Mikhailova, M P, Kizhaev, S S, Ivanov, E V, Ankudinov, A V, Titkov, A N, Boitsov, A V, Bert, N A, Yakovlev, Yu P
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Sprache:eng
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Zusammenfassung:We report the results on structural and optical properties of the InSb quantum dots (QDs) grown on InAs(100) substrate by liquid-phase epitaxy (LPE). The uniform self-assembled QDs with high density (0.7-1.9x1010 cm-2) with dimensions of 3-5 nm in height and 11-13 nm in diameter were obtained in the temperature range T=420-445 deg C. Characterization of the InSb QDs was performed using atomic force microscopy and transmission electron microscopy methods. InAs or InAsSbP epilayer lattice-matched with InAs substrate was used as capping layer to bury InSb/InAs QDs. Photoluminescence and electroluminescence from the buried InSb QDs were observed in the spectral range 3-4 [tm at T=77 K.
ISSN:0930-8989