RF Frequency Doubling Using a Silicon p-i-n Diode-Based Mach-Zehnder Modulator
We demonstrate frequency doubling at 1 GHz using a new silicon Mach-Zehnder modulator (MZM). Modulation of the refractive index of silicon for an MZM action is achieved via the injection/depletion of electrons and holes in a p-i-n diode. The silicon MZM used in the experiment shows high phase-shift...
Gespeichert in:
| Veröffentlicht in: | IEEE photonics technology letters 2008-08, Vol.20 (16), p.1384-1386 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1386 |
|---|---|
| container_issue | 16 |
| container_start_page | 1384 |
| container_title | IEEE photonics technology letters |
| container_volume | 20 |
| creator | Park, Jeong-Woo You, Jong-Bum Lee, Jong-Moo Kim, Gyungock |
| description | We demonstrate frequency doubling at 1 GHz using a new silicon Mach-Zehnder modulator (MZM). Modulation of the refractive index of silicon for an MZM action is achieved via the injection/depletion of electrons and holes in a p-i-n diode. The silicon MZM used in the experiment shows high phase-shift efficiency and a V pi L pi of 1.88times10 -2 Vldrcm which is nearly 350 times smaller than those of previously reported LiNbO 3 -based MZM. Also, a theoretical analysis of frequency doubling in the time domain shows good agreement with the experimental results. |
| doi_str_mv | 10.1109/LPT.2008.926831 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_34529642</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4579330</ieee_id><sourcerecordid>34529642</sourcerecordid><originalsourceid>FETCH-LOGICAL-c319t-78786bc48dbcc3b3e5efc0ce2dad141f8c51089d433cae70813cfc6e521497103</originalsourceid><addsrcrecordid>eNpdkDFPwzAQRi0EEqUwM7BEDGxpfbGT2CNQCkgtIGgXFstxLjRVGhe7GfrvcRXEwHL3De87nR4hl0BHAFSOZ2-LUUKpGMkkEwyOyAAkh5hCzo9DpiEDsPSUnHm_phR4yviAvLxPo6nD7w5bs48mtiuauv2Klv4wdfRRN7WxbbSN67iNJrUtMb7THstors0q_sRVW6KL5rbsGr2z7pycVLrxePG7h2Q5fVjcP8Wz18fn-9tZbBjIXZyLXGSF4aIsjGEFwxQrQw0mpS6BQyVMClTIkjNmNOZUADOVyTBNgMscKBuSm_7u1tnwu9-pTe0NNo1u0XZeMZ4mMuNJAK__gWvbuTb8pkSWSMFElgZo3EPGWe8dVmrr6o12ewVUHeSqIFcd5Kpebmhc9Y0aEf9onuaSMcp-AONsc7E</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>862983865</pqid></control><display><type>article</type><title>RF Frequency Doubling Using a Silicon p-i-n Diode-Based Mach-Zehnder Modulator</title><source>IEEE Electronic Library (IEL)</source><creator>Park, Jeong-Woo ; You, Jong-Bum ; Lee, Jong-Moo ; Kim, Gyungock</creator><creatorcontrib>Park, Jeong-Woo ; You, Jong-Bum ; Lee, Jong-Moo ; Kim, Gyungock</creatorcontrib><description>We demonstrate frequency doubling at 1 GHz using a new silicon Mach-Zehnder modulator (MZM). Modulation of the refractive index of silicon for an MZM action is achieved via the injection/depletion of electrons and holes in a p-i-n diode. The silicon MZM used in the experiment shows high phase-shift efficiency and a V pi L pi of 1.88times10 -2 Vldrcm which is nearly 350 times smaller than those of previously reported LiNbO 3 -based MZM. Also, a theoretical analysis of frequency doubling in the time domain shows good agreement with the experimental results.</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/LPT.2008.926831</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Modulator ; Optical harmonic generation ; Optical refraction ; Optical variables control ; Optical waveguides ; P-i-n diodes ; photonic integrated circuit ; PIN photodiodes ; Radio frequency ; Refractive index ; Silicon ; silicon-on-insulator ; Voltage ; waveguide modulator</subject><ispartof>IEEE photonics technology letters, 2008-08, Vol.20 (16), p.1384-1386</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2008</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-78786bc48dbcc3b3e5efc0ce2dad141f8c51089d433cae70813cfc6e521497103</citedby><cites>FETCH-LOGICAL-c319t-78786bc48dbcc3b3e5efc0ce2dad141f8c51089d433cae70813cfc6e521497103</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4579330$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4579330$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Park, Jeong-Woo</creatorcontrib><creatorcontrib>You, Jong-Bum</creatorcontrib><creatorcontrib>Lee, Jong-Moo</creatorcontrib><creatorcontrib>Kim, Gyungock</creatorcontrib><title>RF Frequency Doubling Using a Silicon p-i-n Diode-Based Mach-Zehnder Modulator</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>We demonstrate frequency doubling at 1 GHz using a new silicon Mach-Zehnder modulator (MZM). Modulation of the refractive index of silicon for an MZM action is achieved via the injection/depletion of electrons and holes in a p-i-n diode. The silicon MZM used in the experiment shows high phase-shift efficiency and a V pi L pi of 1.88times10 -2 Vldrcm which is nearly 350 times smaller than those of previously reported LiNbO 3 -based MZM. Also, a theoretical analysis of frequency doubling in the time domain shows good agreement with the experimental results.</description><subject>Modulator</subject><subject>Optical harmonic generation</subject><subject>Optical refraction</subject><subject>Optical variables control</subject><subject>Optical waveguides</subject><subject>P-i-n diodes</subject><subject>photonic integrated circuit</subject><subject>PIN photodiodes</subject><subject>Radio frequency</subject><subject>Refractive index</subject><subject>Silicon</subject><subject>silicon-on-insulator</subject><subject>Voltage</subject><subject>waveguide modulator</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkDFPwzAQRi0EEqUwM7BEDGxpfbGT2CNQCkgtIGgXFstxLjRVGhe7GfrvcRXEwHL3De87nR4hl0BHAFSOZ2-LUUKpGMkkEwyOyAAkh5hCzo9DpiEDsPSUnHm_phR4yviAvLxPo6nD7w5bs48mtiuauv2Klv4wdfRRN7WxbbSN67iNJrUtMb7THstors0q_sRVW6KL5rbsGr2z7pycVLrxePG7h2Q5fVjcP8Wz18fn-9tZbBjIXZyLXGSF4aIsjGEFwxQrQw0mpS6BQyVMClTIkjNmNOZUADOVyTBNgMscKBuSm_7u1tnwu9-pTe0NNo1u0XZeMZ4mMuNJAK__gWvbuTb8pkSWSMFElgZo3EPGWe8dVmrr6o12ewVUHeSqIFcd5Kpebmhc9Y0aEf9onuaSMcp-AONsc7E</recordid><startdate>20080815</startdate><enddate>20080815</enddate><creator>Park, Jeong-Woo</creator><creator>You, Jong-Bum</creator><creator>Lee, Jong-Moo</creator><creator>Kim, Gyungock</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20080815</creationdate><title>RF Frequency Doubling Using a Silicon p-i-n Diode-Based Mach-Zehnder Modulator</title><author>Park, Jeong-Woo ; You, Jong-Bum ; Lee, Jong-Moo ; Kim, Gyungock</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-78786bc48dbcc3b3e5efc0ce2dad141f8c51089d433cae70813cfc6e521497103</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Modulator</topic><topic>Optical harmonic generation</topic><topic>Optical refraction</topic><topic>Optical variables control</topic><topic>Optical waveguides</topic><topic>P-i-n diodes</topic><topic>photonic integrated circuit</topic><topic>PIN photodiodes</topic><topic>Radio frequency</topic><topic>Refractive index</topic><topic>Silicon</topic><topic>silicon-on-insulator</topic><topic>Voltage</topic><topic>waveguide modulator</topic><toplevel>online_resources</toplevel><creatorcontrib>Park, Jeong-Woo</creatorcontrib><creatorcontrib>You, Jong-Bum</creatorcontrib><creatorcontrib>Lee, Jong-Moo</creatorcontrib><creatorcontrib>Kim, Gyungock</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Park, Jeong-Woo</au><au>You, Jong-Bum</au><au>Lee, Jong-Moo</au><au>Kim, Gyungock</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>RF Frequency Doubling Using a Silicon p-i-n Diode-Based Mach-Zehnder Modulator</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>2008-08-15</date><risdate>2008</risdate><volume>20</volume><issue>16</issue><spage>1384</spage><epage>1386</epage><pages>1384-1386</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>We demonstrate frequency doubling at 1 GHz using a new silicon Mach-Zehnder modulator (MZM). Modulation of the refractive index of silicon for an MZM action is achieved via the injection/depletion of electrons and holes in a p-i-n diode. The silicon MZM used in the experiment shows high phase-shift efficiency and a V pi L pi of 1.88times10 -2 Vldrcm which is nearly 350 times smaller than those of previously reported LiNbO 3 -based MZM. Also, a theoretical analysis of frequency doubling in the time domain shows good agreement with the experimental results.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LPT.2008.926831</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1041-1135 |
| ispartof | IEEE photonics technology letters, 2008-08, Vol.20 (16), p.1384-1386 |
| issn | 1041-1135 1941-0174 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_34529642 |
| source | IEEE Electronic Library (IEL) |
| subjects | Modulator Optical harmonic generation Optical refraction Optical variables control Optical waveguides P-i-n diodes photonic integrated circuit PIN photodiodes Radio frequency Refractive index Silicon silicon-on-insulator Voltage waveguide modulator |
| title | RF Frequency Doubling Using a Silicon p-i-n Diode-Based Mach-Zehnder Modulator |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T08%3A18%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=RF%20Frequency%20Doubling%20Using%20a%20Silicon%20p-i-n%20Diode-Based%20Mach-Zehnder%20Modulator&rft.jtitle=IEEE%20photonics%20technology%20letters&rft.au=Park,%20Jeong-Woo&rft.date=2008-08-15&rft.volume=20&rft.issue=16&rft.spage=1384&rft.epage=1386&rft.pages=1384-1386&rft.issn=1041-1135&rft.eissn=1941-0174&rft.coden=IPTLEL&rft_id=info:doi/10.1109/LPT.2008.926831&rft_dat=%3Cproquest_RIE%3E34529642%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=862983865&rft_id=info:pmid/&rft_ieee_id=4579330&rfr_iscdi=true |