RF Frequency Doubling Using a Silicon p-i-n Diode-Based Mach-Zehnder Modulator

RF Frequency Doubling Using a Silicon p-i-n Diode-Based Mach-Zehnder Modulator

We demonstrate frequency doubling at 1 GHz using a new silicon Mach-Zehnder modulator (MZM). Modulation of the refractive index of silicon for an MZM action is achieved via the injection/depletion of electrons and holes in a p-i-n diode. The silicon MZM used in the experiment shows high phase-shift...

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Veröffentlicht in:IEEE photonics technology letters 2008-08, Vol.20 (16), p.1384-1386
Hauptverfasser: Park, Jeong-Woo, You, Jong-Bum, Lee, Jong-Moo, Kim, Gyungock
Format: Artikel
Sprache:eng
Schlagworte:
Modulator
Optical harmonic generation
Optical refraction
Optical variables control
Optical waveguides
P-i-n diodes
photonic integrated circuit
PIN photodiodes
Radio frequency
Refractive index
Silicon
silicon-on-insulator
Voltage
waveguide modulator
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Beschreibung
Zusammenfassung:We demonstrate frequency doubling at 1 GHz using a new silicon Mach-Zehnder modulator (MZM). Modulation of the refractive index of silicon for an MZM action is achieved via the injection/depletion of electrons and holes in a p-i-n diode. The silicon MZM used in the experiment shows high phase-shift efficiency and a V pi L pi of 1.88times10 -2 Vldrcm which is nearly 350 times smaller than those of previously reported LiNbO 3 -based MZM. Also, a theoretical analysis of frequency doubling in the time domain shows good agreement with the experimental results.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2008.926831