Recovery study of negative bias temperature instability

Recovery study of negative bias temperature instability

In this work, we report a study of negative bias temperature instability (NBTI) recovery in high-k/metal-gate p-channel field effect transistors (pFETs) with different interfaces. New results on the dependence of recovery on interface, stressing voltage ( V s), stressing temperature and stressing ti...

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Veröffentlicht in:Microelectronic engineering 2009-07, Vol.86 (7), p.1888-1890
Hauptverfasser: Wang, Miaomiao, Zafar, Sufi, Stathis, James H.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Dependence of recovery on interface
Dependence of recovery on stressing temperature
Dependence of recovery on stressing time
Dependence of recovery on stressing voltage
Electronics
Exact sciences and technology
NBTI recovery
p-Channel field effect transistors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Beschreibung
Zusammenfassung:In this work, we report a study of negative bias temperature instability (NBTI) recovery in high-k/metal-gate p-channel field effect transistors (pFETs) with different interfaces. New results on the dependence of recovery on interface, stressing voltage ( V s), stressing temperature and stressing time ( t s) are shown.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2009.03.026