Proposal of Single Metal/Dual High-[Formula Omitted] Devices for Aggressively Scaled CMISFETs With Precise Gate Profile Control

We have proposed a single metal/dual high-@@ik@ gate stack for aggressively scaled complementary metal-insulator-semiconductor field-effect transistors (MISFETs). The threshold voltage is controlled by the dual high- @@ik@ dielectrics, such as MgO- and Al@@d2@O@@d3@-containing HfSiON for n- and p-ty...

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Veröffentlicht in:IEEE transactions on electron devices 2009-01, Vol.56 (1), p.85-92
Hauptverfasser: Mise, N, Morooka, T, Eimori, T, Ono, T, Sato, M, Kamiyama, S, Nara, Y, Ohji, Y
Format: Artikel
Sprache:eng
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Zusammenfassung:We have proposed a single metal/dual high-@@ik@ gate stack for aggressively scaled complementary metal-insulator-semiconductor field-effect transistors (MISFETs). The threshold voltage is controlled by the dual high- @@ik@ dielectrics, such as MgO- and Al@@d2@O@@d3@-containing HfSiON for n- and p-type MISFETs, respectively. The gate profile is precisely controlled by taking advantage of a common gate electrode, which will suppress the variation in device performance. Based on this device concept, we have actually fabricated W/TiN/HfMgSiON n-type MISFETs and W/TiN/HfAlSiO p-type MISFETs and have successfully demonstrated a low threshold voltage operation for both of n- and p-type MISFETs.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2008.2007830