A Simple Spacer Technique to Fabricate Poly-Si TFTs With 50-nm Nanowire Channels
In this letter, polycrystalline-silicon thin-film transistors (poly-Si TFTs) with 50-nm nanowire (NW) channels, which are fabricated without advanced photolithography by using a sidewall spacer-formation technique, are proposed for the first time. Because the polygate electrode is perpendicularly ac...
Gespeichert in:
| Veröffentlicht in: | IEEE electron device letters 2007-11, Vol.28 (11), p.993-995 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 995 |
|---|---|
| container_issue | 11 |
| container_start_page | 993 |
| container_title | IEEE electron device letters |
| container_volume | 28 |
| creator | CHANG, Chia-Wen DENG, Chih-Kang CHANG, Hong-Ren CHANG, Che-Lun LEI, Tan-Fu |
| description | In this letter, polycrystalline-silicon thin-film transistors (poly-Si TFTs) with 50-nm nanowire (NW) channels, which are fabricated without advanced photolithography by using a sidewall spacer-formation technique, are proposed for the first time. Because the polygate electrode is perpendicularly across poly-Si NW channels to form a trigatelike structure, the proposed poly-Si NW TFT owns outstanding gate controllability. In summary, a simple and low-cost scheme is proposed to fabricate high-performance poly-Si NW TFT suitable for future display manufacturing and practical applications. |
| doi_str_mv | 10.1109/LED.2007.906808 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_34526902</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4367541</ieee_id><sourcerecordid>926327929</sourcerecordid><originalsourceid>FETCH-LOGICAL-c414t-163712966be1cf9d7e685e0a68e0dd46607ef12c154f81e76da2c0e16c696a5c3</originalsourceid><addsrcrecordid>eNp90U1rGzEQBmARGqib5txDLqLQj8s6M_pcHYMbtwWTBOzSo1DkWayw3nWkNSX_vmscGughpznMM8MML2MfEKaI4C4X19-mAsBOHZga6hM2Qa3rCrSRb9gErMJKIpi37F0pDwColFUTdnfFl2m7a4kvdyFS5iuKmy497okPPZ-H-5xiGIjf9e1TtUx8NV8V_jsNG66h6rb8JnT9n5SJzzah66gt79lpE9pC58_1jP2aX69mP6rF7fefs6tFFRWqoUIjLQpnzD1hbNzakqk1QTA1wXqtjAFLDYqIWjU1kjXrICIQmmicCTrKM_bluHeX-_HaMvhtKpHaNnTU74t3wkhhnXCj_PyqlEoL40CM8OurEK0FKWpAO9KP_9GHfp-78WHvUKADlGpEl0cUc19KpsbvctqG_OQR_CEzP2bmD5n5Y2bjxKfntaHE0DY5dDGVlzGHTgl7cBdHl4joX1tJY7VC-Rf14Zs4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>912190134</pqid></control><display><type>article</type><title>A Simple Spacer Technique to Fabricate Poly-Si TFTs With 50-nm Nanowire Channels</title><source>IEEE Electronic Library (IEL)</source><creator>CHANG, Chia-Wen ; DENG, Chih-Kang ; CHANG, Hong-Ren ; CHANG, Che-Lun ; LEI, Tan-Fu</creator><creatorcontrib>CHANG, Chia-Wen ; DENG, Chih-Kang ; CHANG, Hong-Ren ; CHANG, Che-Lun ; LEI, Tan-Fu</creatorcontrib><description>In this letter, polycrystalline-silicon thin-film transistors (poly-Si TFTs) with 50-nm nanowire (NW) channels, which are fabricated without advanced photolithography by using a sidewall spacer-formation technique, are proposed for the first time. Because the polygate electrode is perpendicularly across poly-Si NW channels to form a trigatelike structure, the proposed poly-Si NW TFT owns outstanding gate controllability. In summary, a simple and low-cost scheme is proposed to fabricate high-performance poly-Si NW TFT suitable for future display manufacturing and practical applications.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2007.906808</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Channels ; Controllability ; Displays ; Electrodes ; Electronics ; Exact sciences and technology ; Glass ; Lithography ; Manufacturing ; Microelectronic fabrication (materials and surfaces technology) ; Nanocomposites ; Nanomaterials ; Nanostructure ; Nanowire (NW) ; Nanowires ; polycrystalline silicon (poly-Si) ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; sidewall spacer ; Silicon ; Substrates ; Thin film circuits ; Thin film transistors ; thin-film transistors (TFTs) ; Transistors ; trigatelike structure</subject><ispartof>IEEE electron device letters, 2007-11, Vol.28 (11), p.993-995</ispartof><rights>2007 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2007</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c414t-163712966be1cf9d7e685e0a68e0dd46607ef12c154f81e76da2c0e16c696a5c3</citedby><cites>FETCH-LOGICAL-c414t-163712966be1cf9d7e685e0a68e0dd46607ef12c154f81e76da2c0e16c696a5c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4367541$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4367541$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19194278$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>CHANG, Chia-Wen</creatorcontrib><creatorcontrib>DENG, Chih-Kang</creatorcontrib><creatorcontrib>CHANG, Hong-Ren</creatorcontrib><creatorcontrib>CHANG, Che-Lun</creatorcontrib><creatorcontrib>LEI, Tan-Fu</creatorcontrib><title>A Simple Spacer Technique to Fabricate Poly-Si TFTs With 50-nm Nanowire Channels</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>In this letter, polycrystalline-silicon thin-film transistors (poly-Si TFTs) with 50-nm nanowire (NW) channels, which are fabricated without advanced photolithography by using a sidewall spacer-formation technique, are proposed for the first time. Because the polygate electrode is perpendicularly across poly-Si NW channels to form a trigatelike structure, the proposed poly-Si NW TFT owns outstanding gate controllability. In summary, a simple and low-cost scheme is proposed to fabricate high-performance poly-Si NW TFT suitable for future display manufacturing and practical applications.</description><subject>Applied sciences</subject><subject>Channels</subject><subject>Controllability</subject><subject>Displays</subject><subject>Electrodes</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Glass</subject><subject>Lithography</subject><subject>Manufacturing</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Nanocomposites</subject><subject>Nanomaterials</subject><subject>Nanostructure</subject><subject>Nanowire (NW)</subject><subject>Nanowires</subject><subject>polycrystalline silicon (poly-Si)</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>sidewall spacer</subject><subject>Silicon</subject><subject>Substrates</subject><subject>Thin film circuits</subject><subject>Thin film transistors</subject><subject>thin-film transistors (TFTs)</subject><subject>Transistors</subject><subject>trigatelike structure</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp90U1rGzEQBmARGqib5txDLqLQj8s6M_pcHYMbtwWTBOzSo1DkWayw3nWkNSX_vmscGughpznMM8MML2MfEKaI4C4X19-mAsBOHZga6hM2Qa3rCrSRb9gErMJKIpi37F0pDwColFUTdnfFl2m7a4kvdyFS5iuKmy497okPPZ-H-5xiGIjf9e1TtUx8NV8V_jsNG66h6rb8JnT9n5SJzzah66gt79lpE9pC58_1jP2aX69mP6rF7fefs6tFFRWqoUIjLQpnzD1hbNzakqk1QTA1wXqtjAFLDYqIWjU1kjXrICIQmmicCTrKM_bluHeX-_HaMvhtKpHaNnTU74t3wkhhnXCj_PyqlEoL40CM8OurEK0FKWpAO9KP_9GHfp-78WHvUKADlGpEl0cUc19KpsbvctqG_OQR_CEzP2bmD5n5Y2bjxKfntaHE0DY5dDGVlzGHTgl7cBdHl4joX1tJY7VC-Rf14Zs4</recordid><startdate>20071101</startdate><enddate>20071101</enddate><creator>CHANG, Chia-Wen</creator><creator>DENG, Chih-Kang</creator><creator>CHANG, Hong-Ren</creator><creator>CHANG, Che-Lun</creator><creator>LEI, Tan-Fu</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20071101</creationdate><title>A Simple Spacer Technique to Fabricate Poly-Si TFTs With 50-nm Nanowire Channels</title><author>CHANG, Chia-Wen ; DENG, Chih-Kang ; CHANG, Hong-Ren ; CHANG, Che-Lun ; LEI, Tan-Fu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c414t-163712966be1cf9d7e685e0a68e0dd46607ef12c154f81e76da2c0e16c696a5c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Applied sciences</topic><topic>Channels</topic><topic>Controllability</topic><topic>Displays</topic><topic>Electrodes</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Glass</topic><topic>Lithography</topic><topic>Manufacturing</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Nanocomposites</topic><topic>Nanomaterials</topic><topic>Nanostructure</topic><topic>Nanowire (NW)</topic><topic>Nanowires</topic><topic>polycrystalline silicon (poly-Si)</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>sidewall spacer</topic><topic>Silicon</topic><topic>Substrates</topic><topic>Thin film circuits</topic><topic>Thin film transistors</topic><topic>thin-film transistors (TFTs)</topic><topic>Transistors</topic><topic>trigatelike structure</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>CHANG, Chia-Wen</creatorcontrib><creatorcontrib>DENG, Chih-Kang</creatorcontrib><creatorcontrib>CHANG, Hong-Ren</creatorcontrib><creatorcontrib>CHANG, Che-Lun</creatorcontrib><creatorcontrib>LEI, Tan-Fu</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHANG, Chia-Wen</au><au>DENG, Chih-Kang</au><au>CHANG, Hong-Ren</au><au>CHANG, Che-Lun</au><au>LEI, Tan-Fu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Simple Spacer Technique to Fabricate Poly-Si TFTs With 50-nm Nanowire Channels</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2007-11-01</date><risdate>2007</risdate><volume>28</volume><issue>11</issue><spage>993</spage><epage>995</epage><pages>993-995</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>In this letter, polycrystalline-silicon thin-film transistors (poly-Si TFTs) with 50-nm nanowire (NW) channels, which are fabricated without advanced photolithography by using a sidewall spacer-formation technique, are proposed for the first time. Because the polygate electrode is perpendicularly across poly-Si NW channels to form a trigatelike structure, the proposed poly-Si NW TFT owns outstanding gate controllability. In summary, a simple and low-cost scheme is proposed to fabricate high-performance poly-Si NW TFT suitable for future display manufacturing and practical applications.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2007.906808</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2007-11, Vol.28 (11), p.993-995 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_34526902 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Channels Controllability Displays Electrodes Electronics Exact sciences and technology Glass Lithography Manufacturing Microelectronic fabrication (materials and surfaces technology) Nanocomposites Nanomaterials Nanostructure Nanowire (NW) Nanowires polycrystalline silicon (poly-Si) Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices sidewall spacer Silicon Substrates Thin film circuits Thin film transistors thin-film transistors (TFTs) Transistors trigatelike structure |
| title | A Simple Spacer Technique to Fabricate Poly-Si TFTs With 50-nm Nanowire Channels |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T02%3A52%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20Simple%20Spacer%20Technique%20to%20Fabricate%20Poly-Si%20TFTs%20With%2050-nm%20Nanowire%20Channels&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=CHANG,%20Chia-Wen&rft.date=2007-11-01&rft.volume=28&rft.issue=11&rft.spage=993&rft.epage=995&rft.pages=993-995&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2007.906808&rft_dat=%3Cproquest_RIE%3E926327929%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=912190134&rft_id=info:pmid/&rft_ieee_id=4367541&rfr_iscdi=true |