A Simple Spacer Technique to Fabricate Poly-Si TFTs With 50-nm Nanowire Channels

In this letter, polycrystalline-silicon thin-film transistors (poly-Si TFTs) with 50-nm nanowire (NW) channels, which are fabricated without advanced photolithography by using a sidewall spacer-formation technique, are proposed for the first time. Because the polygate electrode is perpendicularly ac...

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Veröffentlicht in:	IEEE electron device letters 2007-11, Vol.28 (11), p.993-995
Hauptverfasser:	CHANG, Chia-Wen, DENG, Chih-Kang, CHANG, Hong-Ren, CHANG, Che-Lun, LEI, Tan-Fu
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Channels Controllability Displays Electrodes Electronics Exact sciences and technology Glass Lithography Manufacturing Microelectronic fabrication (materials and surfaces technology) Nanocomposites Nanomaterials Nanostructure Nanowire (NW) Nanowires polycrystalline silicon (poly-Si) Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices sidewall spacer Silicon Substrates Thin film circuits Thin film transistors thin-film transistors (TFTs) Transistors trigatelike structure
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Beschreibung
Zusammenfassung:	In this letter, polycrystalline-silicon thin-film transistors (poly-Si TFTs) with 50-nm nanowire (NW) channels, which are fabricated without advanced photolithography by using a sidewall spacer-formation technique, are proposed for the first time. Because the polygate electrode is perpendicularly across poly-Si NW channels to form a trigatelike structure, the proposed poly-Si NW TFT owns outstanding gate controllability. In summary, a simple and low-cost scheme is proposed to fabricate high-performance poly-Si NW TFT suitable for future display manufacturing and practical applications.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2007.906808