Relaxation and recovery processes of Al@@i@@dx@@Ga@@d1-@@@i@@dx@@N grown on AlN underlying layer

Relaxation and recovery processes of Al@@i@@dx@@Ga@@d1-@@@i@@dx@@N grown on AlN underlying layer

The processes as in title of relaxation of the lattice mismatch and the recovery of crystalline quality in thick Al@@i@@dx@@Ga@@d1-@@@i@@dx@@N on high-temperature-grown AlN were investigated. When @@ix@=0.3, rapid lattice relaxation occurred over a few microns, then the crystalline quality gradually...

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Veröffentlicht in:Journal of crystal growth 2009-05, Vol.311 (10), p.2850-2852
Hauptverfasser: Asai, Toshiaki, Nagata, Kensuke, Mori, Toshiaki, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
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Sprache:eng
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Zusammenfassung:The processes as in title of relaxation of the lattice mismatch and the recovery of crystalline quality in thick Al@@i@@dx@@Ga@@d1-@@@i@@dx@@N on high-temperature-grown AlN were investigated. When @@ix@=0.3, rapid lattice relaxation occurred over a few microns, then the crystalline quality gradually recovered over 10 km. In contrast, when @@ix@=0.7, relaxation of the lattice mismatch gradually occurred over 5 km.
ISSN:0022-0248
DOI:10.1016/j.jcrysgro.2009.01.028