Integration of Gd silicate/TiN gate stacks into SOI n-MOSFETs

Integration of Gd silicate/TiN gate stacks into SOI n-MOSFETs

In this work we describe the gate first integration of gadolinium silicate (GdSiO) high- k dielectrics and metal gate electrodes into SOI n-MOSFETs. Fully functional devices are achieved and compared to reference devices with standard SiO 2. Analysis of electron transport in these gate stacks is per...

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Veröffentlicht in:Microelectronic engineering 2009-07, Vol.86 (7), p.1683-1685
Hauptverfasser: Schmidt, M., Stefani, A., Gottlob, H.D.B., Kurz, H.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Gadolinium silicate
High temperature stable high- k dielectric
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SOI n-MOSFET with high- k
Testing, measurement, noise and reliability
Transistors
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Beschreibung
Zusammenfassung:In this work we describe the gate first integration of gadolinium silicate (GdSiO) high- k dielectrics and metal gate electrodes into SOI n-MOSFETs. Fully functional devices are achieved and compared to reference devices with standard SiO 2. Analysis of electron transport in these gate stacks is performed by specific MOSFET test structures that enable extraction of intrinsic inversion channel mobility. Attractive peak mobilities of 170 cm 2/Vs have been found for GdSiO.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2009.03.064