Integrated plasma processing simulation framework, linking tool scale plasma models with 2D feature scale etch simulator

An integrated, extensible, full featured inductively coupled plasma (ICP) reactor simulation environment with a 2D feature scale etch simulator is presented. It incorporates tool scale plasma chemistry and feature scale trench evolution. Flexibility is achieved by software plugins for gas phase and surface reaction models that can be freely adapted and extended to a wide range of reactant-material systems. Available plasma chemistries cover SF 6, C 4F 8 and O 2 plasmas and are implemented by global models capturing both gas phase and wall-surface reaction kinetics. Surface reaction models for Si, SiO 2, and organic polymers have been developed. Validation of simulation agreement with experimental data is presented for etching of Si by SF 6 plasma.