A Low-Temperature Microwave Anneal Process for Boron-Doped Ultrathin Ge Epilayer on Si Substrate
High source/drain concentration level, ultrashallow junction, and high-mobility channel are important for the requirements of nanoscale transistors. Microwave processing of semiconductors could offer distinct advantages over conventional RTP systems in some applications, and the anneal temperature i...
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| Veröffentlicht in: | IEEE electron device letters 2009-02, Vol.30 (2), p.123-125 |
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| container_end_page | 125 |
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| container_title | IEEE electron device letters |
| container_volume | 30 |
| creator | Yao-Jen Lee Fu-Kuo Hsueh Shih-Chiang Huang Kowalski, J.M. Kowalski, J.E. Cheng, A. Ann Koo Guang-Li Luo Ching-Yi Wu |
| description | High source/drain concentration level, ultrashallow junction, and high-mobility channel are important for the requirements of nanoscale transistors. Microwave processing of semiconductors could offer distinct advantages over conventional RTP systems in some applications, and the anneal temperature is within the range of 300 deg C-500 deg C. By using a low-temperature microwave anneal, the sheet resistance and boron diffusion in the Si/Ge/Si substrate could be reduced effectively, and the crystalline structure of Si/Ge/Si is not damaged according to the TEM image and the XRD signals. |
| doi_str_mv | 10.1109/LED.2008.2009474 |
| format | Article |
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Microwave processing of semiconductors could offer distinct advantages over conventional RTP systems in some applications, and the anneal temperature is within the range of 300 deg C-500 deg C. By using a low-temperature microwave anneal, the sheet resistance and boron diffusion in the Si/Ge/Si substrate could be reduced effectively, and the crystalline structure of Si/Ge/Si is not damaged according to the TEM image and the XRD signals.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2008.2009474</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Annealing ; Applied sciences ; Boron ; Buffer layers ; Channels ; CMOSFETs ; Compound structure devices ; Electromagnetic heating ; Electronics ; Epitaxial growth ; Exact sciences and technology ; Germanium ; Laboratories ; low-temperature anneal ; microwave anneal ; Microwaves ; Molecular electronics, nanoelectronics ; MOSFETs ; Nanostructure ; rapid thermal anneal (RTA) ; Rapid thermal annealing ; Semiconductor electronics. Microelectronics. Optoelectronics. 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Microwave processing of semiconductors could offer distinct advantages over conventional RTP systems in some applications, and the anneal temperature is within the range of 300 deg C-500 deg C. By using a low-temperature microwave anneal, the sheet resistance and boron diffusion in the Si/Ge/Si substrate could be reduced effectively, and the crystalline structure of Si/Ge/Si is not damaged according to the TEM image and the XRD signals.</description><subject>Annealing</subject><subject>Applied sciences</subject><subject>Boron</subject><subject>Buffer layers</subject><subject>Channels</subject><subject>CMOSFETs</subject><subject>Compound structure devices</subject><subject>Electromagnetic heating</subject><subject>Electronics</subject><subject>Epitaxial growth</subject><subject>Exact sciences and technology</subject><subject>Germanium</subject><subject>Laboratories</subject><subject>low-temperature anneal</subject><subject>microwave anneal</subject><subject>Microwaves</subject><subject>Molecular electronics, nanoelectronics</subject><subject>MOSFETs</subject><subject>Nanostructure</subject><subject>rapid thermal anneal (RTA)</subject><subject>Rapid thermal annealing</subject><subject>Semiconductor electronics. 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Solid state devices</subject><subject>Semiconductors</subject><subject>Silicon substrates</subject><subject>Substrates</subject><subject>Temperature distribution</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kc1P3DAQxa2KSl2W3iv1YiG1nAIzdpzExy0sH9JWVALOruOdqEHZONgbEP89jnbFoQcuM4f5vaeZeYx9QzhFBH22Wl6cCoBqKjov809shkpVGahCHrAZlDlmEqH4wg5jfATAPEEz9nfBV_4lu6fNQMFux0D8d-uCf7HPxBd9T7bjf4J3FCNvfOC_fPB9duEHWvOHbpsk_9qeXxFfDm1nXylw3_O7lt-NdZymdMQ-N7aL9HXf5-zhcnl_fp2tbq9uzherzOUSthkSybpshBDWVQ5qsHWFqJEKVbtK140SqoA12GYNQKK02opCqpocOS3XtZyzk53vEPzTSHFrNm101HW2Jz9GU5UKJFRJNGc_PyRlrhCEKBN4_B_46MfQpyuMRgGotYYEwQ5KT4sxUGOG0G5seDUIZkrGpGTMlIzZJ5MkP_a-NjrbNcH2ro3vOoFSpmUn6-87riWi93FeYim0lm_zI5XW</recordid><startdate>20090201</startdate><enddate>20090201</enddate><creator>Yao-Jen Lee</creator><creator>Fu-Kuo Hsueh</creator><creator>Shih-Chiang Huang</creator><creator>Kowalski, J.M.</creator><creator>Kowalski, J.E.</creator><creator>Cheng, A.</creator><creator>Ann Koo</creator><creator>Guang-Li Luo</creator><creator>Ching-Yi Wu</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| subjects | Annealing Applied sciences Boron Buffer layers Channels CMOSFETs Compound structure devices Electromagnetic heating Electronics Epitaxial growth Exact sciences and technology Germanium Laboratories low-temperature anneal microwave anneal Microwaves Molecular electronics, nanoelectronics MOSFETs Nanostructure rapid thermal anneal (RTA) Rapid thermal annealing Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Silicon substrates Substrates Temperature distribution Transistors |
| title | A Low-Temperature Microwave Anneal Process for Boron-Doped Ultrathin Ge Epilayer on Si Substrate |
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