A Low-Temperature Microwave Anneal Process for Boron-Doped Ultrathin Ge Epilayer on Si Substrate

High source/drain concentration level, ultrashallow junction, and high-mobility channel are important for the requirements of nanoscale transistors. Microwave processing of semiconductors could offer distinct advantages over conventional RTP systems in some applications, and the anneal temperature i...

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Veröffentlicht in:	IEEE electron device letters 2009-02, Vol.30 (2), p.123-125
Hauptverfasser:	Yao-Jen Lee, Fu-Kuo Hsueh, Shih-Chiang Huang, Kowalski, J.M., Kowalski, J.E., Cheng, A., Ann Koo, Guang-Li Luo, Ching-Yi Wu
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Applied sciences Boron Buffer layers Channels CMOSFETs Compound structure devices Electromagnetic heating Electronics Epitaxial growth Exact sciences and technology Germanium Laboratories low-temperature anneal microwave anneal Microwaves Molecular electronics, nanoelectronics MOSFETs Nanostructure rapid thermal anneal (RTA) Rapid thermal annealing Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Silicon substrates Substrates Temperature distribution Transistors
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Zusammenfassung:	High source/drain concentration level, ultrashallow junction, and high-mobility channel are important for the requirements of nanoscale transistors. Microwave processing of semiconductors could offer distinct advantages over conventional RTP systems in some applications, and the anneal temperature is within the range of 300 deg C-500 deg C. By using a low-temperature microwave anneal, the sheet resistance and boron diffusion in the Si/Ge/Si substrate could be reduced effectively, and the crystalline structure of Si/Ge/Si is not damaged according to the TEM image and the XRD signals.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2008.2009474