Analysis of the Survivability of GaN Low-Noise Amplifiers

This paper presents a detailed analysis of the stressing mechanisms for highly rugged low-noise GaN monolithic-microwave integrated-circuit amplifiers operated at extremely high input powers. As an example, a low-noise amplifier (LNA) operating in the 3-7-GHz frequency band is used. A noise figure (...

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Veröffentlicht in:	IEEE transactions on microwave theory and techniques 2007-01, Vol.55 (1), p.37-43
Hauptverfasser:	Rudolph, M., Behtash, R., Doerner, R., Hirche, K., Wurfl, J., Heinrich, W., Trankle, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifier noise Amplifiers Applied sciences Circuit properties Devices Direct current Electric, optical and optoelectronic circuits Electrical resistance measurement Electronic circuits Electronics Exact sciences and technology Feedback Gallium nitride Gallium nitrides Gates High power amplifiers integrated-circuit noise Low-noise amplifiers Microwave and submillimeter wave devices, electron transfer devices Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits microwave field-effect transistor (FET) amplifiers Molecular electronics, nanoelectronics monolithic-microwave integrated-circuit (MMIC) amplifiers noise Noise figure Noise levels Noise measurement Radio frequency Radiofrequency amplifiers Radiofrequency identification semiconductor device noise Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stress Survivability
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Zusammenfassung:	This paper presents a detailed analysis of the stressing mechanisms for highly rugged low-noise GaN monolithic-microwave integrated-circuit amplifiers operated at extremely high input powers. As an example, a low-noise amplifier (LNA) operating in the 3-7-GHz frequency band is used. A noise figure (NF) below 2.3 dB is measured from 3.5 to 7 GHz with NF
ISSN:	0018-9480 1557-9670
DOI:	10.1109/TMTT.2006.886907