Analytical Model for the Electron-Injection Statistics During Programming of Nanoscale @@inand@ Flash Memories

Analytical Model for the Electron-Injection Statistics During Programming of Nanoscale @@inand@ Flash Memories

We present a detailed analytical modeling for the constant-current Fowler-Nordheim program operation of NAND flash memories, able to describe both the average transient of the cell threshold voltage and its statistical spread due to the granular [abstract truncated by publisher].

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on electron devices 2008-11, Vol.55 (11), p.3192-3199
Hauptverfasser: Compagnoni, C M, Gusmeroli, R, Spinelli, A S, Visconti, A
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We present a detailed analytical modeling for the constant-current Fowler-Nordheim program operation of NAND flash memories, able to describe both the average transient of the cell threshold voltage and its statistical spread due to the granular [abstract truncated by publisher].
ISSN:0018-9383
DOI:10.1109/TED.2008.2003332