Fringing-Induced Drain Current Improvement in the Tunnel Field-Effect Transistor With High- [Formula Omitted] Gate Dielectrics

Fringing-Induced Drain Current Improvement in the Tunnel Field-Effect Transistor With High- [Formula Omitted] Gate Dielectrics

In this paper, we evaluate the influence of using a high-kappa gate dielectric in the tunnel FET compared to a standard silicon oxide with same equivalent oxide thickness, which exhibits a quite different behavior compared to a conventional MOSFET due to its totally different working principle.

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Veröffentlicht in:IEEE transactions on electron devices 2009-01, Vol.56 (1), p.100-108
Hauptverfasser: Schlosser, M, Bhuwalka, K.K, Sauter, M, Zilbauer, T, Sulima, T, Eisele, I
Format: Artikel
Sprache:eng
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Zusammenfassung:In this paper, we evaluate the influence of using a high-kappa gate dielectric in the tunnel FET compared to a standard silicon oxide with same equivalent oxide thickness, which exhibits a quite different behavior compared to a conventional MOSFET due to its totally different working principle.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2008.2008375