High-Power Broadband Superluminescent Diode Using Selective Area Growth at 1.5-[mu] m Wavelength

High-Power Broadband Superluminescent Diode Using Selective Area Growth at 1.5-[mu] m Wavelength

Superluminescent diode with a selectively grown multiquantum-well layer is demonstrated. The device consists of an angled facet single-mode waveguide with a rear absorption region. High output power (77 mW), wide spectral bandwidth (71-nm full-width [abstract truncated by publisher].

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Veröffentlicht in:IEEE photonics technology letters 2007-10, Vol.19 (19), p.1415-1417
Hauptverfasser: Jung Ho Song, Jung Ho Song, Kisoo Kim, Kisoo Kim, Young Ahn Leem, Young Ahn Leem, Gyungock Kim, Gyungock Kim
Format: Artikel
Sprache:eng
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Zusammenfassung:Superluminescent diode with a selectively grown multiquantum-well layer is demonstrated. The device consists of an angled facet single-mode waveguide with a rear absorption region. High output power (77 mW), wide spectral bandwidth (71-nm full-width [abstract truncated by publisher].
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2007.902946