Good High-Temperature Stability of TiN/ Al@@d2@O@@d3@/WN/TiN Capacitors
For the first time, good thermal stability up to an annealing temperature of 1000degC has been demonstrated for a new TiN/Al@@d2@O@@d3@/WN/TiN capacitor structure. Good electrical performance has been achieved for the proposed layer structure, including a high dielectric constant of approx. 10, low...
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Veröffentlicht in: | IEEE electron device letters 2007-11, Vol.28 (11), p.954-956 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | For the first time, good thermal stability up to an annealing temperature of 1000degC has been demonstrated for a new TiN/Al@@d2@O@@d3@/WN/TiN capacitor structure. Good electrical performance has been achieved for the proposed layer structure, including a high dielectric constant of approx. 10, low leakage current of 1.2times10@@u-7@ A/cm@@u2@ at 1 V, and excellent reliability. A thin WN layer was incorporated into the metal-insulator-metal capacitor between the bottom TiN electrode and the Al@@d2@O@@d3@ dielectric suppressing of interfacial-layer formation at Al@@d2@ O@@d3@/TiN interfaces and resulting in a smoother Al@@d2@O@@d3@/TiN interface. This new layer structure is very attractive for deep-trench capacitor applications in DRAM technologies beyond 50 nm. |
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ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2007.906466 |