Annealing effects of Ga@d2O@d3-ZnO core-shell heteronanowires

Annealing effects of Ga@d2O@d3-ZnO core-shell heteronanowires

We prepared ZnO-coated Ga@d2O@d3 nanowires and investigated changes in the morphological, structural, and photoluminescence (PL) characteristics resulting from application of a thermal annealing process. With the thermal annealing at 800@uoC, defect-associated PL peaks (2.2 and 2.6eV) have been inte...

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Veröffentlicht in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2009-06, Vol.163 (1), p.44-47
Hauptverfasser: Kim, H W, Lee, J W, Kebede, M A, Kim, H S, Lee, C
Format: Artikel
Sprache:eng
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Zusammenfassung:We prepared ZnO-coated Ga@d2O@d3 nanowires and investigated changes in the morphological, structural, and photoluminescence (PL) characteristics resulting from application of a thermal annealing process. With the thermal annealing at 800@uoC, defect-associated PL peaks (2.2 and 2.6eV) have been intensified with respect to the UV peak, and a new 2.8eV-peak has been generated. Possible emission mechanisms are also discussed.
ISSN:0921-5107
DOI:10.1016/j.mseb.2009.04.018