Cycling degradation in TANOS stack

Cycling degradation in TANOS stack

The aim of this work is to investigate the physical mechanisms behind TANOS (TaN/Alumina/Nitride/Oxide/Silicon) cycling degradation. A comparison of the degradation induced in the TANOS stack by unipolar or bipolar stress has allowed the separation the different degradation contributions. A comparis...

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Veröffentlicht in:Microelectronic engineering 2009-07, Vol.86 (7), p.1822-1825
Hauptverfasser: Ghidini, G., Scozzari, C., Galbiati, N., Modelli, A., Camerlenghi, E., Alessandri, M., Del Vitto, A., Albini, G., Grossi, A., Ghilardi, T., Tessariol, P.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Cycling
Dielectrics
Electronics
Exact sciences and technology
Interfaces
Materials
Reliability
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
TANOS
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Beschreibung
Zusammenfassung:The aim of this work is to investigate the physical mechanisms behind TANOS (TaN/Alumina/Nitride/Oxide/Silicon) cycling degradation. A comparison of the degradation induced in the TANOS stack by unipolar or bipolar stress has allowed the separation the different degradation contributions. A comparison with standard floating gate (FG) stack has also been carried out to confirm these degradation mechanisms. Finally, different stack configurations are reported, showing the key factors affecting the degradation and giving trends for improving cycling degradation.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2009.03.041