Electronic structure of memory traps in silicon nitride
From experiments on photoluminescence in Si 3N 4 the polaron energy of 1.4 eV was determined. This value is in agreement with the energy of thermal ionization determined from electron and hole transport. Quantum-chemical simulation showed that Si–Si bond is able to capture holes and electrons in Si...
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| Veröffentlicht in: | Microelectronic engineering 2009-07, Vol.86 (7), p.1866-1869 |
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| container_end_page | 1869 |
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| container_issue | 7 |
| container_start_page | 1866 |
| container_title | Microelectronic engineering |
| container_volume | 86 |
| creator | Gritsenko, V.A. Nekrashevich, S.S. Vasilev, V.V. Shaposhnikov, A.V. |
| description | From experiments on photoluminescence in Si
3N
4 the polaron energy of 1.4
eV was determined. This value is in agreement with the energy of thermal ionization determined from electron and hole transport. Quantum-chemical simulation showed that Si–Si bond is able to capture holes and electrons in Si
3N
4. |
| doi_str_mv | 10.1016/j.mee.2009.03.093 |
| format | Article |
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3N
4 the polaron energy of 1.4
eV was determined. This value is in agreement with the energy of thermal ionization determined from electron and hole transport. Quantum-chemical simulation showed that Si–Si bond is able to capture holes and electrons in Si
3N
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3N
4 the polaron energy of 1.4
eV was determined. This value is in agreement with the energy of thermal ionization determined from electron and hole transport. Quantum-chemical simulation showed that Si–Si bond is able to capture holes and electrons in Si
3N
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3N
4 the polaron energy of 1.4
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3N
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| fulltext | fulltext |
| identifier | ISSN: 0167-9317 |
| ispartof | Microelectronic engineering, 2009-07, Vol.86 (7), p.1866-1869 |
| issn | 0167-9317 1873-5568 |
| language | eng |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Defects Silicon nitride Traps |
| title | Electronic structure of memory traps in silicon nitride |
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