Electronic structure of memory traps in silicon nitride

Electronic structure of memory traps in silicon nitride

From experiments on photoluminescence in Si 3N 4 the polaron energy of 1.4 eV was determined. This value is in agreement with the energy of thermal ionization determined from electron and hole transport. Quantum-chemical simulation showed that Si–Si bond is able to capture holes and electrons in Si...

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Veröffentlicht in:Microelectronic engineering 2009-07, Vol.86 (7), p.1866-1869
Hauptverfasser: Gritsenko, V.A., Nekrashevich, S.S., Vasilev, V.V., Shaposhnikov, A.V.
Format: Artikel
Sprache:eng
Schlagworte:
Defects
Silicon nitride
Traps
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Zusammenfassung:From experiments on photoluminescence in Si 3N 4 the polaron energy of 1.4 eV was determined. This value is in agreement with the energy of thermal ionization determined from electron and hole transport. Quantum-chemical simulation showed that Si–Si bond is able to capture holes and electrons in Si 3N 4.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2009.03.093