3-10-GHz Ultra-Wideband Low-Noise Amplifier Utilizing Miller Effect and Inductive Shunt-Shunt Feedback Technique

In this paper, we demonstrate an SiGe HBT ultra-wideband (UWB) low-noise amplifier (LNA), achieved by a newly proposed methodology, which takes advantage of the Miller effect for UWB input impedance matching and the inductive shunt-shunt feedback technique for bandwidth extension by pole-zero cancel...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 2007-09, Vol.55 (9), p.1832-1843
Hauptverfasser: LIN, Yu-Tso, CHEN, Hsiao-Chin, TAO WANG, LIN, Yo-Sheng, LU, Shey-Shi
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Sprache:eng
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Zusammenfassung:In this paper, we demonstrate an SiGe HBT ultra-wideband (UWB) low-noise amplifier (LNA), achieved by a newly proposed methodology, which takes advantage of the Miller effect for UWB input impedance matching and the inductive shunt-shunt feedback technique for bandwidth extension by pole-zero cancellation. The SiGe UWB LNA dissipates 25.8-mW power and achieves S 11 below -10 dB for frequencies from 3 to 14 GHz (except for a small range from 10 to 11 GHz, which is below -9 dB), flat S 21 of 24.6 plusmn 1.5 dB for frequencies from 3 to 11.6 GHz, noise figure of 2.5 and 5.8 dB at 3 and 10 GHz, respectively, and good phase linearity property (group-delay variation is only plusmn28 ps across the entire band). The measured 1-dB compression point (P 1 dB) and input third-order intermodulation point are -25.5 and -17 dBm, respectively, at 5.4 GHz.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2007.903836