1-[mu]m Enhancement Mode GaAs N-Channel MOSFETs With Transconductance Exceeding 250 mS/mm

In this letter, 1-mum GaAs-based enhancement-mode n-channel devices with channel mobility of 5500 cm@@u2@/Vmiddots and g @@dm@ exceeding 250 mS/mm have been fabricated. The measured device parameters including threshold voltage V@@dth@, maximum extrinsic transconductance g@@dm@, saturation current I@@ddss @, on-resistance R@@don@, and gate current are 0.11 V, 254 mS/mm, 380 mA/mm, 4.5 Omegamiddotmm, and < 56 pA for a first wafer and 0.08 V, 229 mS/mm, 443 mA/mm, 4.5 Omegamiddotmm, and < 90 pA for a second wafer, respectively. With an intrinsic transconductance g@@dmi@ of 434 mS/mm, GaAs enhancement-mode MOSFETs have reached expected intrinsic device performance.