A Bulk FinFET Unified-RAM (URAM) Cell for Multifunctioning NVM and Capacitorless 1T-DRAM

A bulk FinFET-based unified-RAM (URAM) cell technology is demonstrated for the fusion of a nonvolatile-memory (NVM) and capacitorless 1T-DRAM. An oxide/nitride/oxide layer and a floating-body are combined to perform a URAM operation in a single transistor. A buried n-well technology for NMOS allows...

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Veröffentlicht in:	IEEE electron device letters 2008-06, Vol.29 (6), p.632-634
Hauptverfasser:	Han, Jin-Woo, Ryu, Seong-Wan, Kim, Sungho, Kim, Chung-Jin, Ahn, Jae-Hyuk, Choi, Sung-Jin, Kim, Jin Soo, Kim, Kwang Hee, Lee, Gi Sung, Oh, Jae Sub, Song, Myeong Ho, Park, Yun Chang, Kim, Jeoung Woo, Choi, Yang-Kyu
Format:	Artikel
Sprache:	eng
Schlagworte:	1T-DRAM Bulk FinFET capacitorless DRAM Charge carrier processes Compatibility Cooling Costs Devices Disturbances Electron traps Embedded system FinFET FinFETs High speed MOS devices Nonvolatile memory nonvolatile memory (NVM) Oxides Random access memory Semiconductor devices SONOS SONOS devices Transistors Tunneling unified-RAM (URAM)
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