A Bulk FinFET Unified-RAM (URAM) Cell for Multifunctioning NVM and Capacitorless 1T-DRAM

A bulk FinFET-based unified-RAM (URAM) cell technology is demonstrated for the fusion of a nonvolatile-memory (NVM) and capacitorless 1T-DRAM. An oxide/nitride/oxide layer and a floating-body are combined to perform a URAM operation in a single transistor. A buried n-well technology for NMOS allows...

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Veröffentlicht in:IEEE electron device letters 2008-06, Vol.29 (6), p.632-634
Hauptverfasser: Han, Jin-Woo, Ryu, Seong-Wan, Kim, Sungho, Kim, Chung-Jin, Ahn, Jae-Hyuk, Choi, Sung-Jin, Kim, Jin Soo, Kim, Kwang Hee, Lee, Gi Sung, Oh, Jae Sub, Song, Myeong Ho, Park, Yun Chang, Kim, Jeoung Woo, Choi, Yang-Kyu
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Sprache:eng
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Zusammenfassung:A bulk FinFET-based unified-RAM (URAM) cell technology is demonstrated for the fusion of a nonvolatile-memory (NVM) and capacitorless 1T-DRAM. An oxide/nitride/oxide layer and a floating-body are combined to perform a URAM operation in a single transistor. A buried n-well technology for NMOS allows hole accumulation for the 1T-DRAM operation in a p-type bulk substrate. The bulk FinFET URAM offers a cost-effective and fully compatible process with a conventional FinFET SONOS, and it also expedites heat dissipation. Highly reliable NVM and high-speed 1T-DRAM operation are confirmed, and it was also verified that there is no disturbance between the two memory functions.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2008.922142