A Distributed Bragg Reflector Silicon Evanescent Laser

A Distributed Bragg Reflector Silicon Evanescent Laser

We report a distributed Bragg reflector silicon evanescent laser operating continuous wave at 1596 nm. The lasing threshold and maximum output power are 65 mA and 11 mW, respectively. The device generates open eye-diagrams under direct modulation at data rates up to 4 Gb/s.

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Veröffentlicht in:IEEE photonics technology letters 2008-10, Vol.20 (20), p.1667-1669
Hauptverfasser: Fang, A.W., Koch, B.R., Jones, R., Lively, E., Di Liang, Ying-Hao Kuo, Bowers, J.E.
Format: Artikel
Sprache:eng
Schlagworte:
Distributed Bragg reflectors
Gratings
Hybrid integration
Optical surface waves
Optical waveguides
Power generation
Pump lasers
Semiconductor lasers
Silicon
silicon-on-insulator technology
Wafer bonding
Waveguide lasers
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Beschreibung
Zusammenfassung:We report a distributed Bragg reflector silicon evanescent laser operating continuous wave at 1596 nm. The lasing threshold and maximum output power are 65 mA and 11 mW, respectively. The device generates open eye-diagrams under direct modulation at data rates up to 4 Gb/s.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2008.2003382