An Analytical Model of an OCVD-Based Measurement Technique of the Local Carrier Lifetime
A model of a new technique to measure the spatial distribution of the majority and minority carrier lifetime along epilayers is presented. Being in good agreement with simulations, this model clarifies the behavior of the test structure used in the technique and gives a physical interpretation of th...
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| Veröffentlicht in: | IEEE transactions on electron devices 2007-11, Vol.54 (11), p.2998-3006 |
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| container_end_page | 3006 |
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| container_issue | 11 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 54 |
| creator | Bellone, S. Licciardo, G.D. Guerriero, G. Rubino, A. |
| description | A model of a new technique to measure the spatial distribution of the majority and minority carrier lifetime along epilayers is presented. Being in good agreement with simulations, this model clarifies the behavior of the test structure used in the technique and gives a physical interpretation of the measured quantities. |
| doi_str_mv | 10.1109/TED.2007.907162 |
| format | Article |
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Being in good agreement with simulations, this model clarifies the behavior of the test structure used in the technique and gives a physical interpretation of the measured quantities.</description><subject>Accuracy</subject><subject>Applied sciences</subject><subject>Carrier lifetime</subject><subject>Carrier recombination lifetime</subject><subject>Charge carrier lifetime</subject><subject>Computer simulation</subject><subject>Current measurement</subject><subject>Devices</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>lifetime profile</subject><subject>Mathematical analysis</subject><subject>measurement technique</subject><subject>Minority carriers</subject><subject>modeling</subject><subject>negative resistance</subject><subject>Numerical models</subject><subject>open-circuit voltage decay (OCVD)</subject><subject>Semiconductor device measurement</subject><subject>Spatial distribution</subject><subject>Substrates</subject><subject>Testing, measurement, noise and reliability</subject><subject>Transient analysis</subject><subject>Voltage measurement</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkc1vEzEQxS0EEiFw5sDFQgJOm46_xvYxpC0gpeolIG4r1zurutrsFntz6H-Po1Qg9QCn0Wh-781oHmNvBayEAH-2uzhfSQC78mAFymdsIYyxjUeNz9kCQLjGK6deslel3NUWtZYL9nM98vUYhoc5xTDwq6mjgU89DyO_3vw4bz6HQh2_olAOmfY0znxH8XZMvw50xOZb4tvpqNyEnBNlvk09zWlPr9mLPgyF3jzWJft-ebHbfG2211--bdbbJiqr50ZEK2RnAIWjGwwRqVNAXd95j3AjFWkXpQgebRcAAQitd8E4bXsTiFAt2aeT732e6lFlbvepRBqGMNJ0KK0HhUqC-z_pHKCzaGwlP_6TVFprq5Ss4Psn4N10yPWd1Q2VAykrtmRnJyjmqZRMfXuf0z7kh1ZAe4yurdG1x-jaU3RV8eHRNpT62z6HMabyV-aFN0KYyr07cYmI_oy1Qmvq-t8o256s</recordid><startdate>200711</startdate><enddate>200711</enddate><creator>Bellone, S.</creator><creator>Licciardo, G.D.</creator><creator>Guerriero, G.</creator><creator>Rubino, A.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2007-11, Vol.54 (11), p.2998-3006 |
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| language | eng |
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| source | IEEE Xplore |
| subjects | Accuracy Applied sciences Carrier lifetime Carrier recombination lifetime Charge carrier lifetime Computer simulation Current measurement Devices Electronics Exact sciences and technology lifetime profile Mathematical analysis measurement technique Minority carriers modeling negative resistance Numerical models open-circuit voltage decay (OCVD) Semiconductor device measurement Spatial distribution Substrates Testing, measurement, noise and reliability Transient analysis Voltage measurement |
| title | An Analytical Model of an OCVD-Based Measurement Technique of the Local Carrier Lifetime |
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