An Analytical Model of an OCVD-Based Measurement Technique of the Local Carrier Lifetime

A model of a new technique to measure the spatial distribution of the majority and minority carrier lifetime along epilayers is presented. Being in good agreement with simulations, this model clarifies the behavior of the test structure used in the technique and gives a physical interpretation of th...

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Veröffentlicht in:	IEEE transactions on electron devices 2007-11, Vol.54 (11), p.2998-3006
Hauptverfasser:	Bellone, S., Licciardo, G.D., Guerriero, G., Rubino, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Accuracy Applied sciences Carrier lifetime Carrier recombination lifetime Charge carrier lifetime Computer simulation Current measurement Devices Electronics Exact sciences and technology lifetime profile Mathematical analysis measurement technique Minority carriers modeling negative resistance Numerical models open-circuit voltage decay (OCVD) Semiconductor device measurement Spatial distribution Substrates Testing, measurement, noise and reliability Transient analysis Voltage measurement
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Beschreibung
Zusammenfassung:	A model of a new technique to measure the spatial distribution of the majority and minority carrier lifetime along epilayers is presented. Being in good agreement with simulations, this model clarifies the behavior of the test structure used in the technique and gives a physical interpretation of the measured quantities.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2007.907162