In-Situ Measurement of Supply-Noise Maps With Millivolt Accuracy and Nanosecond-Order Time Resolution

An in situ measurement scheme for generating supply-noise maps, which can be conducted while running applications in product-level LSIs, was developed. The design of the on-chip voltage sampling probe is based on a simple ring oscillator, which converts local supply difference between VDD and V SS t...

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Veröffentlicht in:IEEE journal of solid-state circuits 2007-04, Vol.42 (4), p.784-789
Hauptverfasser: Kanno, Y., Kondoh, Y., Irita, T., Hirose, K., Mori, R., Yasu, Y., Komatsu, S., Mizuno, H.
Format: Artikel
Sprache:eng
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Zusammenfassung:An in situ measurement scheme for generating supply-noise maps, which can be conducted while running applications in product-level LSIs, was developed. The design of the on-chip voltage sampling probe is based on a simple ring oscillator, which converts local supply difference between VDD and V SS to oscillation-frequency deviation. High measurement accuracy is achieved by off-chip digital signal processing and calibration. This scheme was used to successfully measure 69-mV local supply noise with 5-ns time resolution in a 3G-cellular-phone processor. It will thus help in designing power-supply networks and in visually verifying the quality of a power supply
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2007.891662