High Detection Sensitivity of Ultraviolet 4H-SiC Avalanche Photodiodes

High Detection Sensitivity of Ultraviolet 4H-SiC Avalanche Photodiodes

We report 4H-SiC p-i-n avalanche photodiodes (APDs) with very low dark current. When biased for a photocurrent gain M of 1000, a 100-mum-diameter device exhibits dark current of 5 pA (63 nA/cm 2 ), corresponding to primary multiplied dark current of 5 fA (63 pA/cm 2 ). The peak responsivity at unity...

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Veröffentlicht in:IEEE journal of quantum electronics 2007-12, Vol.43 (12), p.1159-1162
Hauptverfasser: Xiaogang Bai, Xiangyi Guo, Mcintosh, D.C., Han-Din Liu, Campbell, J.C.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Avalanche photodiodes
Avalanche photodiodes (APDs)
Avalanches
Dark current
Electronics
Exact sciences and technology
Gain
Laser modes
linear mode
Military communication
Optoelectronic devices
Photoconductivity
Photocurrent
Photodiodes
PIN photodiodes
Quantum electronics
Semiconductor device noise
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Signal to noise ratio
Silicon carbide
silicon carbide (SiC)
Tunneling
Ultraviolet
ultraviolet (UV)
Unity
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Zusammenfassung:We report 4H-SiC p-i-n avalanche photodiodes (APDs) with very low dark current. When biased for a photocurrent gain M of 1000, a 100-mum-diameter device exhibits dark current of 5 pA (63 nA/cm 2 ), corresponding to primary multiplied dark current of 5 fA (63 pA/cm 2 ). The peak responsivity at unity gain is 93 mA/W (external quantum efficiency = 41%) at lambda = 280 nm. The excess noise factor corresponds to k = 0.1. Detection of several tens of femtowatts of ultraviolet light is reported.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2007.905031