CIGS solar cell with MBE-grown ZnS buffer layer
Cu(In 0.52Ga 0.48)Se 2 solar cell performance with an MBE-grown ZnS buffer layer was studied. It was found that cell performance with the ZnS buffer layer was inferior compared to that with the CdS buffer layer; however, by insertion of a 50 nm CdS layer in addition to the ZnS buffer layer, the devi...
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| Veröffentlicht in: | Solar energy materials and solar cells 2009-06, Vol.93 (6), p.970-972 |
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| container_issue | 6 |
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| container_title | Solar energy materials and solar cells |
| container_volume | 93 |
| creator | Islam, M.M. Ishizuka, S. Yamada, A. Sakurai, K. Niki, S. Sakurai, T. Akimoto, K. |
| description | Cu(In
0.52Ga
0.48)Se
2 solar cell performance with an MBE-grown ZnS buffer layer was studied. It was found that cell performance with the ZnS buffer layer was inferior compared to that with the CdS buffer layer; however, by insertion of a 50
nm CdS layer in addition to the ZnS buffer layer, the device performance was improved and was better than that with the CdS buffer layer. The higher device performance by using the ZnS/CdS double buffer layer may be due to the improved interface properties of the device. |
| doi_str_mv | 10.1016/j.solmat.2008.11.047 |
| format | Article |
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0.52Ga
0.48)Se
2 solar cell performance with an MBE-grown ZnS buffer layer was studied. It was found that cell performance with the ZnS buffer layer was inferior compared to that with the CdS buffer layer; however, by insertion of a 50
nm CdS layer in addition to the ZnS buffer layer, the device performance was improved and was better than that with the CdS buffer layer. The higher device performance by using the ZnS/CdS double buffer layer may be due to the improved interface properties of the device.</description><identifier>ISSN: 0927-0248</identifier><identifier>EISSN: 1879-3398</identifier><identifier>DOI: 10.1016/j.solmat.2008.11.047</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Cu(In Ga)Se 2 ; Double buffer layer ; Efficiency ; Energy ; Exact sciences and technology ; Natural energy ; Photovoltaic conversion ; Solar cell ; Solar cells. Photoelectrochemical cells ; Solar energy ; ZnS buffer layer</subject><ispartof>Solar energy materials and solar cells, 2009-06, Vol.93 (6), p.970-972</ispartof><rights>2008 Elsevier B.V.</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c367t-d28b6fe59fe072dfcbe4d9ebc79f25a70cc11b6383269f673f518f247881228e3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0927024808004273$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3537,23909,23910,25118,27901,27902,65534</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21793220$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Islam, M.M.</creatorcontrib><creatorcontrib>Ishizuka, S.</creatorcontrib><creatorcontrib>Yamada, A.</creatorcontrib><creatorcontrib>Sakurai, K.</creatorcontrib><creatorcontrib>Niki, S.</creatorcontrib><creatorcontrib>Sakurai, T.</creatorcontrib><creatorcontrib>Akimoto, K.</creatorcontrib><title>CIGS solar cell with MBE-grown ZnS buffer layer</title><title>Solar energy materials and solar cells</title><description>Cu(In
0.52Ga
0.48)Se
2 solar cell performance with an MBE-grown ZnS buffer layer was studied. It was found that cell performance with the ZnS buffer layer was inferior compared to that with the CdS buffer layer; however, by insertion of a 50
nm CdS layer in addition to the ZnS buffer layer, the device performance was improved and was better than that with the CdS buffer layer. The higher device performance by using the ZnS/CdS double buffer layer may be due to the improved interface properties of the device.</description><subject>Applied sciences</subject><subject>Cu(In Ga)Se 2</subject><subject>Double buffer layer</subject><subject>Efficiency</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>Natural energy</subject><subject>Photovoltaic conversion</subject><subject>Solar cell</subject><subject>Solar cells. Photoelectrochemical cells</subject><subject>Solar energy</subject><subject>ZnS buffer layer</subject><issn>0927-0248</issn><issn>1879-3398</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp9kLFOwzAQhi0EEqXwBgxZYEvqs5PYWZCgKqVSEUNhYbEc5wyu0qTYKVXfnlRBjEy3fP9_dx8h10AToJBP1klo643uEkapTAASmooTMgIpipjzQp6SES2YiClL5Tm5CGFNKWU5T0dkMl3MV1Ef1z4yWNfR3nWf0fPDLP7w7b6J3ptVVO6sRR_V-oD-kpxZXQe8-p1j8vY4e50-xcuX-WJ6v4wNz0UXV0yWucWssEgFq6wpMa0KLI0oLMu0oMYAlDmXnOWFzQW3GUjLUiElMCaRj8nt0Lv17dcOQ6c2LhwP1A22u6B4moLMAHowHUDj2xA8WrX1bqP9QQFVRztqrQY76mhHAajeTh-7-e3Xwejaet0YF_6yDETBGaM9dzdw2D_77dCrYBw2Bivn0XSqat3_i34AI7x6ow</recordid><startdate>20090601</startdate><enddate>20090601</enddate><creator>Islam, M.M.</creator><creator>Ishizuka, S.</creator><creator>Yamada, A.</creator><creator>Sakurai, K.</creator><creator>Niki, S.</creator><creator>Sakurai, T.</creator><creator>Akimoto, K.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20090601</creationdate><title>CIGS solar cell with MBE-grown ZnS buffer layer</title><author>Islam, M.M. ; Ishizuka, S. ; Yamada, A. ; Sakurai, K. ; Niki, S. ; Sakurai, T. ; Akimoto, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c367t-d28b6fe59fe072dfcbe4d9ebc79f25a70cc11b6383269f673f518f247881228e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Applied sciences</topic><topic>Cu(In Ga)Se 2</topic><topic>Double buffer layer</topic><topic>Efficiency</topic><topic>Energy</topic><topic>Exact sciences and technology</topic><topic>Natural energy</topic><topic>Photovoltaic conversion</topic><topic>Solar cell</topic><topic>Solar cells. Photoelectrochemical cells</topic><topic>Solar energy</topic><topic>ZnS buffer layer</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Islam, M.M.</creatorcontrib><creatorcontrib>Ishizuka, S.</creatorcontrib><creatorcontrib>Yamada, A.</creatorcontrib><creatorcontrib>Sakurai, K.</creatorcontrib><creatorcontrib>Niki, S.</creatorcontrib><creatorcontrib>Sakurai, T.</creatorcontrib><creatorcontrib>Akimoto, K.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solar energy materials and solar cells</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Islam, M.M.</au><au>Ishizuka, S.</au><au>Yamada, A.</au><au>Sakurai, K.</au><au>Niki, S.</au><au>Sakurai, T.</au><au>Akimoto, K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>CIGS solar cell with MBE-grown ZnS buffer layer</atitle><jtitle>Solar energy materials and solar cells</jtitle><date>2009-06-01</date><risdate>2009</risdate><volume>93</volume><issue>6</issue><spage>970</spage><epage>972</epage><pages>970-972</pages><issn>0927-0248</issn><eissn>1879-3398</eissn><abstract>Cu(In
0.52Ga
0.48)Se
2 solar cell performance with an MBE-grown ZnS buffer layer was studied. It was found that cell performance with the ZnS buffer layer was inferior compared to that with the CdS buffer layer; however, by insertion of a 50
nm CdS layer in addition to the ZnS buffer layer, the device performance was improved and was better than that with the CdS buffer layer. The higher device performance by using the ZnS/CdS double buffer layer may be due to the improved interface properties of the device.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.solmat.2008.11.047</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0927-0248 |
| ispartof | Solar energy materials and solar cells, 2009-06, Vol.93 (6), p.970-972 |
| issn | 0927-0248 1879-3398 |
| language | eng |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Applied sciences Cu(In Ga)Se 2 Double buffer layer Efficiency Energy Exact sciences and technology Natural energy Photovoltaic conversion Solar cell Solar cells. Photoelectrochemical cells Solar energy ZnS buffer layer |
| title | CIGS solar cell with MBE-grown ZnS buffer layer |
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