CIGS solar cell with MBE-grown ZnS buffer layer

CIGS solar cell with MBE-grown ZnS buffer layer

Cu(In 0.52Ga 0.48)Se 2 solar cell performance with an MBE-grown ZnS buffer layer was studied. It was found that cell performance with the ZnS buffer layer was inferior compared to that with the CdS buffer layer; however, by insertion of a 50 nm CdS layer in addition to the ZnS buffer layer, the devi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Solar energy materials and solar cells 2009-06, Vol.93 (6), p.970-972
Hauptverfasser: Islam, M.M., Ishizuka, S., Yamada, A., Sakurai, K., Niki, S., Sakurai, T., Akimoto, K.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Cu(In Ga)Se 2
Double buffer layer
Efficiency
Energy
Exact sciences and technology
Natural energy
Photovoltaic conversion
Solar cell
Solar cells. Photoelectrochemical cells
Solar energy
ZnS buffer layer
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Cu(In 0.52Ga 0.48)Se 2 solar cell performance with an MBE-grown ZnS buffer layer was studied. It was found that cell performance with the ZnS buffer layer was inferior compared to that with the CdS buffer layer; however, by insertion of a 50 nm CdS layer in addition to the ZnS buffer layer, the device performance was improved and was better than that with the CdS buffer layer. The higher device performance by using the ZnS/CdS double buffer layer may be due to the improved interface properties of the device.
ISSN:0927-0248
1879-3398
DOI:10.1016/j.solmat.2008.11.047