Enhancement of the External Quantum Efficiency of a Silicon Quantum Dot Light-Emitting Diode by Localized Surface Plasmons

Enhancement of the External Quantum Efficiency of a Silicon Quantum Dot Light-Emitting Diode by Localized Surface Plasmons

The electroluminescence intensity of a silicon quantum dot (Si QD) light‐emitting diode (LED) with an Ag layer containing Ag particles can be enhanced by 434% relative to a Si QD LED without an Ag layer. The large enhancement is attributed to an increase in radiative quantum efficiency as a result o...

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Veröffentlicht in:Advanced materials (Weinheim) 2008-08, Vol.20 (16), p.3100-3104
Hauptverfasser: Kim, Beak-Hyun, Cho, Chang-Hee, Mun, Jin-Soo, Kwon, Min-Ki, Park, Tae-Young, Kim, Jong Su, Byeon, Clare Chisu, Lee, Jongmin, Park, Seong-Ju
Format: Artikel
Sprache:eng
Schlagworte:
light-emitting diode
quantum dots
silicon
surface plasmon resonance
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Zusammenfassung:The electroluminescence intensity of a silicon quantum dot (Si QD) light‐emitting diode (LED) with an Ag layer containing Ag particles can be enhanced by 434% relative to a Si QD LED without an Ag layer. The large enhancement is attributed to an increase in radiative quantum efficiency as a result of coupling between Si QDs and localized surface plasmons and increased current injection efficiency through improved carrier tunneling into Si QDs.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200703096