Influence of Dopant Profiles and Traps on the Low Frequency Noise of Four Gate Transistors

Influence of Dopant Profiles and Traps on the Low Frequency Noise of Four Gate Transistors

This work presents a study that correlates technological parameters of SOI four-gate field-effect-transistors (G4-FET) with their output characteristics and low frequency noise in order to optimize their performance. This structure can control the position and size of the conduction channel by the a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Rodriguez, A Luque, Tejada, J A Jimenez, Villanueva, J A Lopez, Godoy, A, Bullejos, P Lara, Gomez-Campos, M
Format: Tagungsbericht
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 588
container_issue
container_start_page 585
container_title
container_volume 1129
creator Rodriguez, A Luque
Tejada, J A Jimenez
Villanueva, J A Lopez
Godoy, A
Bullejos, P Lara
Gomez-Campos, M
description This work presents a study that correlates technological parameters of SOI four-gate field-effect-transistors (G4-FET) with their output characteristics and low frequency noise in order to optimize their performance. This structure can control the position and size of the conduction channel by the application of adequate voltages to its four gates (front and back MOS gates and two lateral JFET gates). Due to this reason, many parameters can affect its behavior. We have studied the dependence of I-V characteristics and low frequency noise with parameters such as the doping profile in the channel, drain and source regions, impurities in the volume of the semiconductor, and traps in the Si-SiO2 interfaces.
doi_str_mv 10.1063/1.3140542
format Conference Proceeding
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_34274972</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>34274972</sourcerecordid><originalsourceid>FETCH-LOGICAL-p186t-7702ae8434a8e9b4e3ab47abaa44af926f72b1034fd091bdd2ca93b39d54aff83</originalsourceid><addsrcrecordid>eNotjrFOwzAURS0BEm1h4A88saU82y9xPKJCSqUIGIqEWKqXxBZBwQ5xIsTftwWmO5x7ri5jVwKWAjJ1I5ZKIKQoT9gctEoRsiyFUzYDMJhIVK_nbB7jB4A0Wucz9rbxrpusry0Pjt-FnvzIn4fg2s5GTr7h24H6yIPn47vlZfjmxWC_jsYPfwxt_PWKMA18TaM9tn1s4xiGeMHOHHXRXv7ngr0U99vVQ1I-rTer2zLpRZ6NidYgyeaokHJrKrSKKtRUESGSMzJzWlYCFLoGjKiaRtZkVKVMkx64y9WCXf_t9kM4HIvj7rONte068jZMcadQajRaqj2ELVUZ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype><pqid>34274972</pqid></control><display><type>conference_proceeding</type><title>Influence of Dopant Profiles and Traps on the Low Frequency Noise of Four Gate Transistors</title><source>AIP Journals Complete</source><creator>Rodriguez, A Luque ; Tejada, J A Jimenez ; Villanueva, J A Lopez ; Godoy, A ; Bullejos, P Lara ; Gomez-Campos, M</creator><creatorcontrib>Rodriguez, A Luque ; Tejada, J A Jimenez ; Villanueva, J A Lopez ; Godoy, A ; Bullejos, P Lara ; Gomez-Campos, M</creatorcontrib><description>This work presents a study that correlates technological parameters of SOI four-gate field-effect-transistors (G4-FET) with their output characteristics and low frequency noise in order to optimize their performance. This structure can control the position and size of the conduction channel by the application of adequate voltages to its four gates (front and back MOS gates and two lateral JFET gates). Due to this reason, many parameters can affect its behavior. We have studied the dependence of I-V characteristics and low frequency noise with parameters such as the doping profile in the channel, drain and source regions, impurities in the volume of the semiconductor, and traps in the Si-SiO2 interfaces.</description><identifier>ISSN: 0094-243X</identifier><identifier>ISBN: 0735406650</identifier><identifier>ISBN: 9780735406650</identifier><identifier>DOI: 10.1063/1.3140542</identifier><language>eng</language><ispartof>Noise and Fluctuations (AIP Conference Proceedings Volume 1129), 2009, Vol.1129, p.585-588</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids></links><search><creatorcontrib>Rodriguez, A Luque</creatorcontrib><creatorcontrib>Tejada, J A Jimenez</creatorcontrib><creatorcontrib>Villanueva, J A Lopez</creatorcontrib><creatorcontrib>Godoy, A</creatorcontrib><creatorcontrib>Bullejos, P Lara</creatorcontrib><creatorcontrib>Gomez-Campos, M</creatorcontrib><title>Influence of Dopant Profiles and Traps on the Low Frequency Noise of Four Gate Transistors</title><title>Noise and Fluctuations (AIP Conference Proceedings Volume 1129)</title><description>This work presents a study that correlates technological parameters of SOI four-gate field-effect-transistors (G4-FET) with their output characteristics and low frequency noise in order to optimize their performance. This structure can control the position and size of the conduction channel by the application of adequate voltages to its four gates (front and back MOS gates and two lateral JFET gates). Due to this reason, many parameters can affect its behavior. We have studied the dependence of I-V characteristics and low frequency noise with parameters such as the doping profile in the channel, drain and source regions, impurities in the volume of the semiconductor, and traps in the Si-SiO2 interfaces.</description><issn>0094-243X</issn><isbn>0735406650</isbn><isbn>9780735406650</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNotjrFOwzAURS0BEm1h4A88saU82y9xPKJCSqUIGIqEWKqXxBZBwQ5xIsTftwWmO5x7ri5jVwKWAjJ1I5ZKIKQoT9gctEoRsiyFUzYDMJhIVK_nbB7jB4A0Wucz9rbxrpusry0Pjt-FnvzIn4fg2s5GTr7h24H6yIPn47vlZfjmxWC_jsYPfwxt_PWKMA18TaM9tn1s4xiGeMHOHHXRXv7ngr0U99vVQ1I-rTer2zLpRZ6NidYgyeaokHJrKrSKKtRUESGSMzJzWlYCFLoGjKiaRtZkVKVMkx64y9WCXf_t9kM4HIvj7rONte068jZMcadQajRaqj2ELVUZ</recordid><startdate>20090101</startdate><enddate>20090101</enddate><creator>Rodriguez, A Luque</creator><creator>Tejada, J A Jimenez</creator><creator>Villanueva, J A Lopez</creator><creator>Godoy, A</creator><creator>Bullejos, P Lara</creator><creator>Gomez-Campos, M</creator><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20090101</creationdate><title>Influence of Dopant Profiles and Traps on the Low Frequency Noise of Four Gate Transistors</title><author>Rodriguez, A Luque ; Tejada, J A Jimenez ; Villanueva, J A Lopez ; Godoy, A ; Bullejos, P Lara ; Gomez-Campos, M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p186t-7702ae8434a8e9b4e3ab47abaa44af926f72b1034fd091bdd2ca93b39d54aff83</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rodriguez, A Luque</creatorcontrib><creatorcontrib>Tejada, J A Jimenez</creatorcontrib><creatorcontrib>Villanueva, J A Lopez</creatorcontrib><creatorcontrib>Godoy, A</creatorcontrib><creatorcontrib>Bullejos, P Lara</creatorcontrib><creatorcontrib>Gomez-Campos, M</creatorcontrib><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Rodriguez, A Luque</au><au>Tejada, J A Jimenez</au><au>Villanueva, J A Lopez</au><au>Godoy, A</au><au>Bullejos, P Lara</au><au>Gomez-Campos, M</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Influence of Dopant Profiles and Traps on the Low Frequency Noise of Four Gate Transistors</atitle><btitle>Noise and Fluctuations (AIP Conference Proceedings Volume 1129)</btitle><date>2009-01-01</date><risdate>2009</risdate><volume>1129</volume><spage>585</spage><epage>588</epage><pages>585-588</pages><issn>0094-243X</issn><isbn>0735406650</isbn><isbn>9780735406650</isbn><abstract>This work presents a study that correlates technological parameters of SOI four-gate field-effect-transistors (G4-FET) with their output characteristics and low frequency noise in order to optimize their performance. This structure can control the position and size of the conduction channel by the application of adequate voltages to its four gates (front and back MOS gates and two lateral JFET gates). Due to this reason, many parameters can affect its behavior. We have studied the dependence of I-V characteristics and low frequency noise with parameters such as the doping profile in the channel, drain and source regions, impurities in the volume of the semiconductor, and traps in the Si-SiO2 interfaces.</abstract><doi>10.1063/1.3140542</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0094-243X
ispartof Noise and Fluctuations (AIP Conference Proceedings Volume 1129), 2009, Vol.1129, p.585-588
issn 0094-243X
language eng
recordid cdi_proquest_miscellaneous_34274972
source AIP Journals Complete
title Influence of Dopant Profiles and Traps on the Low Frequency Noise of Four Gate Transistors
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T06%3A04%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Influence%20of%20Dopant%20Profiles%20and%20Traps%20on%20the%20Low%20Frequency%20Noise%20of%20Four%20Gate%20Transistors&rft.btitle=Noise%20and%20Fluctuations%20(AIP%20Conference%20Proceedings%20Volume%201129)&rft.au=Rodriguez,%20A%20Luque&rft.date=2009-01-01&rft.volume=1129&rft.spage=585&rft.epage=588&rft.pages=585-588&rft.issn=0094-243X&rft.isbn=0735406650&rft.isbn_list=9780735406650&rft_id=info:doi/10.1063/1.3140542&rft_dat=%3Cproquest%3E34274972%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=34274972&rft_id=info:pmid/&rfr_iscdi=true