Influence of Dopant Profiles and Traps on the Low Frequency Noise of Four Gate Transistors

This work presents a study that correlates technological parameters of SOI four-gate field-effect-transistors (G4-FET) with their output characteristics and low frequency noise in order to optimize their performance. This structure can control the position and size of the conduction channel by the application of adequate voltages to its four gates (front and back MOS gates and two lateral JFET gates). Due to this reason, many parameters can affect its behavior. We have studied the dependence of I-V characteristics and low frequency noise with parameters such as the doping profile in the channel, drain and source regions, impurities in the volume of the semiconductor, and traps in the Si-SiO2 interfaces.