Low temperature Al doped ZnO films on a flexible substrate by DC sputtering

The target of Al doped ZnO was prepared. AZO thin films were deposited on PolyCarbonate (PC) by the DC sputtering method. The thickness of films was controlled to within about 400 nm. Thin films fabricated on a PC substrate were compared to those fabricated on glass and quartz. The resistivity of Al doped ZnO (AZO) films deposited on a PC substrate was 4.5×10–3 Ω‐cm. The transmittance of all films exceeded 80% across the visible spectrum. AZO deposited on PC was compared to AZO deposited on a rigid substrate and Ga doped ZnO (GZO) deposited on PC, to identify characteristic differences such as the substrate, and characteristic differences with respect to the atomic radius of impurity atoms. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)