MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zones

We report on the MBE growth and properties of heterostructures and laser diodes based on 4 ML InAs/3 ML GaSb/1 ML InSb/3 ML GaSb short-period superlattices (SPSLs) for emission in the 3–4 μm wavelength range. We show that the interface configuration has a strong influence on both the structural and electronic properties of the SPSL. Excellent agreement between experimental and simulated X-ray diffraction patterns reveals the excellent crystal quality achieved with such complex SPSLs. Lasing is demonstrated up to 300 K in pulsed conditions and up to 200 K under continuous wave operation. Laser emission is centered at 3.32 μm, a technologically very interesting wavelength. Our results demonstrate the potential of these new active zones for mid-IR laser diodes.