CMOS low-dropout regulator with 3.3muA quiescent current without off-chip capacitor
A CMOS (complementary metal-oxide-semiconductor transistor) low-dropout regulator (LDO) with 3.3 V output voltage and 100 mA output current for system-on-chip applications to reduce board space and external pins is presented. By utilizing a dynamic slew-rate enhancement (SRE) circuit and nested Mill...
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| Veröffentlicht in: | Dong nan da xue xue bao 2009-03, Vol.25 (1), p.13-17 |
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| container_title | Dong nan da xue xue bao |
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| creator | Wang, Yi Cui, Chuanrong Gong, Wenchao He, Lenian |
| description | A CMOS (complementary metal-oxide-semiconductor transistor) low-dropout regulator (LDO) with 3.3 V output voltage and 100 mA output current for system-on-chip applications to reduce board space and external pins is presented. By utilizing a dynamic slew-rate enhancement (SRE) circuit and nested Miller compensation (NMC) on the LDO structure, the proposed LDO provides high stability during line and load regulation without off-chip load capacitors. The overshot voltage is limited within 550 mV and the settling time is less than 50mus when the load current decreases from 100 mA to 1 mA. By using a 30 nA reference current, the quiescent current is 3.3muA. The proposed design is implemented by CSMC 0.5mum mixed-signal process. The experimental results agree with the simulation results. Copyright. |
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| fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_34169841</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>34169841</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_341698413</originalsourceid><addsrcrecordid>eNqNjLsOgjAYRjtoIl7e4Z_cakpaEUZDNC7GAXfS1CI1hZZewusLiQ_gdIbvnG-BkpQQik9FflyhtfcfQhihLEtQVd4fFWgz4pcz1sQATr6j5sE4GFVogR5oF88wRCW9kH0AEZ2bOa-zb5oGi1ZZENxyoaZwi5YN117uftyg_fXyLG_YOjNE6UPdqelLa95LE31NWZoVOUvp3-IXUwxCrA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>34169841</pqid></control><display><type>article</type><title>CMOS low-dropout regulator with 3.3muA quiescent current without off-chip capacitor</title><source>Alma/SFX Local Collection</source><creator>Wang, Yi ; Cui, Chuanrong ; Gong, Wenchao ; He, Lenian</creator><creatorcontrib>Wang, Yi ; Cui, Chuanrong ; Gong, Wenchao ; He, Lenian</creatorcontrib><description>A CMOS (complementary metal-oxide-semiconductor transistor) low-dropout regulator (LDO) with 3.3 V output voltage and 100 mA output current for system-on-chip applications to reduce board space and external pins is presented. By utilizing a dynamic slew-rate enhancement (SRE) circuit and nested Miller compensation (NMC) on the LDO structure, the proposed LDO provides high stability during line and load regulation without off-chip load capacitors. The overshot voltage is limited within 550 mV and the settling time is less than 50mus when the load current decreases from 100 mA to 1 mA. By using a 30 nA reference current, the quiescent current is 3.3muA. The proposed design is implemented by CSMC 0.5mum mixed-signal process. The experimental results agree with the simulation results. Copyright.</description><identifier>ISSN: 1003-7985</identifier><language>eng</language><ispartof>Dong nan da xue xue bao, 2009-03, Vol.25 (1), p.13-17</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782</link.rule.ids></links><search><creatorcontrib>Wang, Yi</creatorcontrib><creatorcontrib>Cui, Chuanrong</creatorcontrib><creatorcontrib>Gong, Wenchao</creatorcontrib><creatorcontrib>He, Lenian</creatorcontrib><title>CMOS low-dropout regulator with 3.3muA quiescent current without off-chip capacitor</title><title>Dong nan da xue xue bao</title><description>A CMOS (complementary metal-oxide-semiconductor transistor) low-dropout regulator (LDO) with 3.3 V output voltage and 100 mA output current for system-on-chip applications to reduce board space and external pins is presented. By utilizing a dynamic slew-rate enhancement (SRE) circuit and nested Miller compensation (NMC) on the LDO structure, the proposed LDO provides high stability during line and load regulation without off-chip load capacitors. The overshot voltage is limited within 550 mV and the settling time is less than 50mus when the load current decreases from 100 mA to 1 mA. By using a 30 nA reference current, the quiescent current is 3.3muA. The proposed design is implemented by CSMC 0.5mum mixed-signal process. The experimental results agree with the simulation results. Copyright.</description><issn>1003-7985</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqNjLsOgjAYRjtoIl7e4Z_cakpaEUZDNC7GAXfS1CI1hZZewusLiQ_gdIbvnG-BkpQQik9FflyhtfcfQhihLEtQVd4fFWgz4pcz1sQATr6j5sE4GFVogR5oF88wRCW9kH0AEZ2bOa-zb5oGi1ZZENxyoaZwi5YN117uftyg_fXyLG_YOjNE6UPdqelLa95LE31NWZoVOUvp3-IXUwxCrA</recordid><startdate>20090301</startdate><enddate>20090301</enddate><creator>Wang, Yi</creator><creator>Cui, Chuanrong</creator><creator>Gong, Wenchao</creator><creator>He, Lenian</creator><scope>7SC</scope><scope>7SP</scope><scope>7SR</scope><scope>7TB</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>FR3</scope><scope>JG9</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope></search><sort><creationdate>20090301</creationdate><title>CMOS low-dropout regulator with 3.3muA quiescent current without off-chip capacitor</title><author>Wang, Yi ; Cui, Chuanrong ; Gong, Wenchao ; He, Lenian</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_341698413</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Wang, Yi</creatorcontrib><creatorcontrib>Cui, Chuanrong</creatorcontrib><creatorcontrib>Gong, Wenchao</creatorcontrib><creatorcontrib>He, Lenian</creatorcontrib><collection>Computer and Information Systems Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><jtitle>Dong nan da xue xue bao</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Yi</au><au>Cui, Chuanrong</au><au>Gong, Wenchao</au><au>He, Lenian</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>CMOS low-dropout regulator with 3.3muA quiescent current without off-chip capacitor</atitle><jtitle>Dong nan da xue xue bao</jtitle><date>2009-03-01</date><risdate>2009</risdate><volume>25</volume><issue>1</issue><spage>13</spage><epage>17</epage><pages>13-17</pages><issn>1003-7985</issn><abstract>A CMOS (complementary metal-oxide-semiconductor transistor) low-dropout regulator (LDO) with 3.3 V output voltage and 100 mA output current for system-on-chip applications to reduce board space and external pins is presented. By utilizing a dynamic slew-rate enhancement (SRE) circuit and nested Miller compensation (NMC) on the LDO structure, the proposed LDO provides high stability during line and load regulation without off-chip load capacitors. The overshot voltage is limited within 550 mV and the settling time is less than 50mus when the load current decreases from 100 mA to 1 mA. By using a 30 nA reference current, the quiescent current is 3.3muA. The proposed design is implemented by CSMC 0.5mum mixed-signal process. The experimental results agree with the simulation results. Copyright.</abstract></addata></record> |
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| language | eng |
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| source | Alma/SFX Local Collection |
| title | CMOS low-dropout regulator with 3.3muA quiescent current without off-chip capacitor |
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