1/f noise, transport and percolation in carbon nanotube film field-effect transistors: simulation and experiments

1/f noise, transport and percolation in carbon nanotube film field-effect transistors: simulation and experiments

In this paper we present a model for electrical properties of carbon nanotube film field-effect transistors. The model, based on carbon nanotube physics uses Landauer formalism and tight binding calculation. The total film is described as an electrical network. A modified nodal analysis provides DC...

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Bibliographische Detailangaben
Hauptverfasser: Soliveres, S, Martinez, F, Hoffmann, A, Pascal, F
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Electronics
Engineering Sciences
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Beschreibung
Zusammenfassung:In this paper we present a model for electrical properties of carbon nanotube film field-effect transistors. The model, based on carbon nanotube physics uses Landauer formalism and tight binding calculation. The total film is described as an electrical network. A modified nodal analysis provides DC and noise characteristics. Theses simulations are in good agreements with experimental results.
ISSN:0094-243X
DOI:10.1063/1.3140564