1/f Noise in p-Channel Screen-Grid Field Effect Transistors (SGrFETs) as a Device Evaluation Tool

Screen-Grid Field Effect Transistors (SGrFETs) are multi-gate devices with a novel gate geometry consisting of oxide wrapped metal cylinders standing perpendicular to the current flow between source and drain. TCAD simulations show robust downscaling performance and high functionality of single devices. Experimental results are presented on fabricated p-type SGrFETs. The fabrication process has been characterized via FIB-SEM images and via the use of low frequency noise measurements. Low frequency noise measurements give an insight into the influence of the gate cylinders inside the channel. It is shown that the flicker noise in these devices does not increase systematically with an increase in the number of gate cylinders. This result strengthens the conjecture that SGrFETs are suitable for low power applications with multi-gate functionality.