A Doping-Free Carbon Nanotube CMOS Inverter-Based Bipolar Diode and Ambipolar Transistor

A Doping-Free Carbon Nanotube CMOS Inverter-Based Bipolar Diode and Ambipolar Transistor

A barrier‐free bipolar diode (BFBD) and an ambipolar field‐effect transistor (FET) are fabricated based on a doping‐free carbon nanotube (CNT) CMOS inverter. The basic CNT device unit consists of two Pd and two Sc electrodes deposited side‐by‐side on a single CNT, and can be used as an n‐FET, p‐FET,...

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Veröffentlicht in:Advanced materials (Weinheim) 2008-09, Vol.20 (17), p.3258-3262
Hauptverfasser: Wang, Sheng, Zhang, Zhiyong, Ding, Li, Liang, Xuelei, Shen, Jun, Xu, Huilong, Chen, Qing, Cui, RongLi, Li, Yan, Peng, Lian-Mao
Format: Artikel
Sprache:eng
Schlagworte:
Carbon nanotubes
Diodes
Electrodes
Field-effect transistors
Semiconductors
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Zusammenfassung:A barrier‐free bipolar diode (BFBD) and an ambipolar field‐effect transistor (FET) are fabricated based on a doping‐free carbon nanotube (CNT) CMOS inverter. The basic CNT device unit consists of two Pd and two Sc electrodes deposited side‐by‐side on a single CNT, and can be used as an n‐FET, p‐FET, CMOS inverter, and high‐performance ambipolar FET and BFBD in which both electrons and holes contribute effectively to the forward current.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200703210