Comparison of Operating Mechanisms for the Poly(N-vinylcarbazole) Based Non-Volatile Memory Devices
The organic non-volatile memory devices (NVMs) based on poly(N-vinylcarbazole) (PVK) with the different structures and compositions were fabricated and evaluated. The resistance states in the devices were controlled by the external electric field and exhibited the distinctive properties; the device...
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| Veröffentlicht in: | Macromolecular symposia 2008-07, Vol.268 (1), p.81-85 |
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| creator | Choi, Jin-Sik Suh, Dong Hack |
| description | The organic non-volatile memory devices (NVMs) based on poly(N-vinylcarbazole) (PVK) with the different structures and compositions were fabricated and evaluated. The resistance states in the devices were controlled by the external electric field and exhibited the distinctive properties; the device with a single PVK layer was a write-once read-many-times memory by the field induced filament as a conduction path and its memory properties depended on the PVK thickness, the PVK/Al/PVK structured device was operated by a space charge limited current model and was sensitive to preparing condition of the internal Al layer, and the device performances with the PVK based charge transfer complex depended on the composition of the CT materials and the surface condition of the bottom electrode. |
| doi_str_mv | 10.1002/masy.200850817 |
| format | Article |
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The resistance states in the devices were controlled by the external electric field and exhibited the distinctive properties; the device with a single PVK layer was a write-once read-many-times memory by the field induced filament as a conduction path and its memory properties depended on the PVK thickness, the PVK/Al/PVK structured device was operated by a space charge limited current model and was sensitive to preparing condition of the internal Al layer, and the device performances with the PVK based charge transfer complex depended on the composition of the CT materials and the surface condition of the bottom electrode.</description><identifier>ISSN: 1022-1360</identifier><identifier>EISSN: 1521-3900</identifier><identifier>DOI: 10.1002/masy.200850817</identifier><language>eng</language><publisher>Weinheim: Wiley-VCH Verlag</publisher><subject>Aluminum ; Application fields ; Applied sciences ; Charge transfer ; Compound structure devices ; Data storage ; Devices ; Electrodes ; Electronics ; Exact sciences and technology ; filament ; Filaments ; Memory devices ; organic non-volatile memory devices ; Polymer industry, paints, wood ; Polyvinyl carbazole ; Semiconductor electronics. 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Symp</addtitle><description>The organic non-volatile memory devices (NVMs) based on poly(N-vinylcarbazole) (PVK) with the different structures and compositions were fabricated and evaluated. The resistance states in the devices were controlled by the external electric field and exhibited the distinctive properties; the device with a single PVK layer was a write-once read-many-times memory by the field induced filament as a conduction path and its memory properties depended on the PVK thickness, the PVK/Al/PVK structured device was operated by a space charge limited current model and was sensitive to preparing condition of the internal Al layer, and the device performances with the PVK based charge transfer complex depended on the composition of the CT materials and the surface condition of the bottom electrode.</description><subject>Aluminum</subject><subject>Application fields</subject><subject>Applied sciences</subject><subject>Charge transfer</subject><subject>Compound structure devices</subject><subject>Data storage</subject><subject>Devices</subject><subject>Electrodes</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>filament</subject><subject>Filaments</subject><subject>Memory devices</subject><subject>organic non-volatile memory devices</subject><subject>Polymer industry, paints, wood</subject><subject>Polyvinyl carbazole</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>space charge limited current</subject><subject>Technology of polymers</subject><subject>thin Film</subject><issn>1022-1360</issn><issn>1521-3900</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNqFkkFv1DAQRiMEEqVw5UouoHLIMmM7dnxsFyhI3S1oKYiT5TiTNpDEi70thF-Pq1QrTnAaH977RvrGWfYUYYEA7NVg47RgAFUJFap72QGWDAuuAe6nNzBWIJfwMHsU4zcA0FrhQeaWftja0EU_5r7Nz7cU7K4bL_MVuSs7dnGIeetDvrui_IPvp6N1cdONU-9sqO1v39PL_MRGavK1H4vPvk9yT0kefJjy13TTOYqPswet7SM9uZuH2cXbN5-W74qz89P3y-OzwglRqoLV1AquG-BCEVhEyWtWCSobklo3lRS6da6uqOaStKZa6UZI5nhLqMta88PsxZy7Df7HNcWdGbroqO_tSP46Gi4QS4kigUf_BJFJqQRTHBK6mFEXfIyBWrMN3WDDZBDMbe3mtnazrz0Jz--ybXS2b4MdXRf3FkscEwoTp2fuZyps-k-qWR1vvv69o5jdLu7o19614buRiqvSfFmfms1HtlpLDmaZ-Gcz31pv7GW6trnYMECefgFDFMD_AGsurBs</recordid><startdate>200807</startdate><enddate>200807</enddate><creator>Choi, Jin-Sik</creator><creator>Suh, Dong Hack</creator><general>Wiley-VCH Verlag</general><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley-VCH</general><scope>FBQ</scope><scope>BSCLL</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>200807</creationdate><title>Comparison of Operating Mechanisms for the Poly(N-vinylcarbazole) Based Non-Volatile Memory Devices</title><author>Choi, Jin-Sik ; Suh, Dong Hack</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4457-2bef439d0347e0a1163b284e5de699d8649fccb8eb36e99eb79d462c3fe195b93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Aluminum</topic><topic>Application fields</topic><topic>Applied sciences</topic><topic>Charge transfer</topic><topic>Compound structure devices</topic><topic>Data storage</topic><topic>Devices</topic><topic>Electrodes</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>filament</topic><topic>Filaments</topic><topic>Memory devices</topic><topic>organic non-volatile memory devices</topic><topic>Polymer industry, paints, wood</topic><topic>Polyvinyl carbazole</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>space charge limited current</topic><topic>Technology of polymers</topic><topic>thin Film</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Choi, Jin-Sik</creatorcontrib><creatorcontrib>Suh, Dong Hack</creatorcontrib><collection>AGRIS</collection><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Macromolecular symposia</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Choi, Jin-Sik</au><au>Suh, Dong Hack</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Comparison of Operating Mechanisms for the Poly(N-vinylcarbazole) Based Non-Volatile Memory Devices</atitle><jtitle>Macromolecular symposia</jtitle><addtitle>Macromol. 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The resistance states in the devices were controlled by the external electric field and exhibited the distinctive properties; the device with a single PVK layer was a write-once read-many-times memory by the field induced filament as a conduction path and its memory properties depended on the PVK thickness, the PVK/Al/PVK structured device was operated by a space charge limited current model and was sensitive to preparing condition of the internal Al layer, and the device performances with the PVK based charge transfer complex depended on the composition of the CT materials and the surface condition of the bottom electrode.</abstract><cop>Weinheim</cop><pub>Wiley-VCH Verlag</pub><doi>10.1002/masy.200850817</doi><tpages>5</tpages></addata></record> |
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| language | eng |
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| source | Wiley Journals |
| subjects | Aluminum Application fields Applied sciences Charge transfer Compound structure devices Data storage Devices Electrodes Electronics Exact sciences and technology filament Filaments Memory devices organic non-volatile memory devices Polymer industry, paints, wood Polyvinyl carbazole Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices space charge limited current Technology of polymers thin Film |
| title | Comparison of Operating Mechanisms for the Poly(N-vinylcarbazole) Based Non-Volatile Memory Devices |
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