Comparison of Operating Mechanisms for the Poly(N-vinylcarbazole) Based Non-Volatile Memory Devices

The organic non-volatile memory devices (NVMs) based on poly(N-vinylcarbazole) (PVK) with the different structures and compositions were fabricated and evaluated. The resistance states in the devices were controlled by the external electric field and exhibited the distinctive properties; the device with a single PVK layer was a write-once read-many-times memory by the field induced filament as a conduction path and its memory properties depended on the PVK thickness, the PVK/Al/PVK structured device was operated by a space charge limited current model and was sensitive to preparing condition of the internal Al layer, and the device performances with the PVK based charge transfer complex depended on the composition of the CT materials and the surface condition of the bottom electrode.