The origination of ill-defined layer in organic spin valves

The origination of ill-defined layer in organic spin valves was investigated by using atomic force microscopy (AFM) and Rutherford backscattering (RBS) analysis. It was found that conductive bulges of LSMO film and self-grown pinholes in Alq 3 film other than Co inclusions could lead to the formatio...

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Veröffentlicht in:	Applied surface science 2009-03, Vol.255 (11), p.5682-5685
Hauptverfasser:	Lin, L., Pang, Z.Y., Wang, F.G., Lv, M.S., Yang, T.L., Ye, L.N., Han, S.H.
Format:	Artikel
Sprache:	eng
Schlagworte:	8-Hydroxyquioline aluminum (Alq 3) Analytical chemistry Applied sciences Atomic force microscopy (AFM) Chemistry Condensed matter: structure, mechanical and thermal properties Electronics Exact sciences and technology Interface Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics Miscellaneous Organic electronics Physics Rutherford backscattering (RBS) Rutherford backscattering (RBS), and other methods of chemical analysis Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Zusammenfassung:	The origination of ill-defined layer in organic spin valves was investigated by using atomic force microscopy (AFM) and Rutherford backscattering (RBS) analysis. It was found that conductive bulges of LSMO film and self-grown pinholes in Alq 3 film other than Co inclusions could lead to the formation of ill-defined layer. The morphology of LSMO substrate had a strong influence on that of Alq 3 film, LSMO/Alq 3 and Alq 3/Co interfaces. Moreover, Alq 3 film with the thickness of 1–4 nm could be barriers which was explained by small active area and added insulated layer in organic magnetic tunnel junctions.
ISSN:	0169-4332 1873-5584
DOI:	10.1016/j.apsusc.2008.12.052